tag: advanced nodes

On-Chip Power Distribution Modeling Becomes Essential Below 7nm
By Ann Mutschler - 16 Nov, 2022 - Comments: 0

Modeling power distribution in SoCs is becoming increasingly important at each new node and in 3D-ICs, where tolerances involving power are much tighter and any mistake can cause functional failures. At mature nodes, where there is more metal, power problems continue to be rare. But at advanced nodes, where chips are running at higher frequencies and still consuming the same or greater power... » read more

A Study Of The Impact Of Line Edge Roughness On Metal Line Resistance Using Virtual Fabrication
By Coventor - 15 Sep, 2022 - Comments: 0

BEOL metal line RC delay has become a dominant factor limiting chip operation speeds at advanced nodes. This is because smaller metal line pitches require narrower line CD and line-to-line spacing, which introduces higher metal line resistance and line-to-line capacitance. A surface scattering effect is the root cause for the exponentially increased metal resistivity at smaller metal line pitch... » read more

Methods To Overcome Limited Labeled Data Sets In Machine Learning-Based Optical Critical Dimension Metrology
By Onto Innovation - 07 Sep, 2022 - Comments: 0

With the aggressive scaling of semiconductor devices, the increasing complexity of device structure coupled with tighter metrology error budget has driven up Optical Critical Dimension (OCD) time to solution to a critical point. Machine Learning (ML), thanks to its extremely fast turnaround, has been successfully applied in OCD metrology as an alternative solution to the conventional physical... » read more

Novel E-Beam Techniques For Inspection And Monitoring
By PDF Solutions - 09 May, 2022 - Comments: 0

In this paper, we report an advanced e-beam defect inspection tool (eProbe®250) and the Design-for-Inspection™ (DFI) system that has been built and deployed by PDF Solutions down to 4nm FinFET technology nodes. This tool has a very high throughput which allows for in-line inspection of nanometer-level defects in the most advanced technology nodes. We also present eProbe applications for... » read more

Advanced High Throughput e-Beam Inspection With DirectScan
By PDF Solutions - 08 Mar, 2022 - Comments: 0

Optical inspection cannot resolve critical defects at advanced nodes and cannot detect subsurface defects. Especially at 7nm and below, many yield and reliability killer defects are the result of interactions between lithography, etch, and fill. These defects often will have part per billion (PPB) level fail rates. Conventional eBeam tools lack the throughput to measure PPB level fail rates. A ... » read more

Innovative Dual Mark Design For Alignment Verification And Process Monitoring In Advanced Lithography
By UMC - 21 Jul, 2021 - Comments: 0

Improving on product overlay is one of the key challenges when shrinking technology nodes in semiconductor manufacturing. . . . With smart placement of alignment mark pairs in the X and Y direction, it is possible to determine intra-wafer distortion wafer-by-wafer. Both the measurement and modeled results are applied directly as a feed-forward correction to enable wafer level control. In this p... » read more

Lower Power Chips: What To Watch Out For
By Ann Mutschler - 08 Jul, 2021 - Comments: 0

Low-power design in advanced nodes and advanced packaging is becoming a multi-faceted, multi-disciplinary challenge, where a long list of issues need to be solved both individually and in the context of other issues. With each new leading-edge process node, and with increasingly dense packaging, the potential for problematic interactions is growing. That, in turn, can lead to poor yield, cos... » read more

Monitoring Performance From Inside A Chip
By Ed Sperling - 01 Jun, 2021 - Comments: 0

Deep data, which is generated inside the chip rather than externally, is becoming more critical at each new process node and in advanced packages. Uzi Baruch, chief strategy officer at proteanTecs, talks with Semiconductor Engineering about using that data to identify potential problems before they result in failures in the field, and why it's essential to monitor these devices throughout their... » read more

Novel Etch Technologies Utilizing Atomic Layer Process For Advanced Patterning
By TEL - 17 Dec, 2020 - Comments: 0

We demonstrated a high selective and anisotropic plasma etch of Si3N4 and SiC. The demonstrated process consists of a sequence of ion modification and chemical dry removal steps. The Si3N4 etch with H ion modification showed a high selectivity to SiO2 and SiC films. In addition, we have developed selective etch of SiC with N ion modification. On the other hand, in the patterning etch processes,... » read more

Lower Process Nodes Drive Timing Signoff Software Evolution
By Synopsys - 10 Nov, 2020 - Comments: 0

A dramatic rise in design complexity has led to a slew of new signoff challenges that impact the ability to predictably meet PPA targets. Smaller technology nodes and larger design sizes have caused the number of corners and modes to grow exponentially leading to much longer turnaround times for timing signoff. Moreover, larger design sizes demand huge compute resources for timing signoff. I... » read more

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