A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

Sub-5 nm logic nodes will require an extremely high level of innovation to overcome the inherent real-estate limitations at this increased device density. One approach to increasing device density is to look at the vertical device dimension (z-direction), and stack devices on top of each other instead of conventionally side-by-side. The fabrication of a Complementary-Field Effect Transistor (CF... » read more


Semiconductor Engineering sat down to compare the benefits, risks and challenges of moving to finFETs compared with fully depleted silicon on insulator ([getkc id="220" kc_name="FD-SOI"]) with Philippe Magarshack, group vice president for technology R&D at [getentity id="22331" comment="STMicroelectronics"]; Marco Brambilla, director of engineering at [getentity id="22150" e_name="Synapse D... » read more

IBM, Intel And TSMC Roll Out finFETs

At the IEEE International Electron Devices Meeting (IEDM) in San Franciso, IBM, Intel and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) this week will separately present the latest details of their respective 16nm/14nm finFET technologies. As expected, Intel and TSMC will continue to use bulk CMOS. IBM will continue to go with rival silicon-on-insulator (SOI) technology. At IEDM, Intel ... » read more

The Week In Review: Manufacturing

It’s official: IBM appears to be exiting the chip business. After months of talks, IBM has agreed to pay GlobalFoundries $1.5 billion to take Big Blue’s chip unit off its hands, according to reports from Bloomberg. IBM will also receive $200 million worth of assets, according to the reports. At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel and IBM will present... » read more

Has The IC Industry Hit A ‘Red Brick Wall’?

In the mid-1980s, the semiconductor industry was in a crisis. Chipmakers were looking for ways to break the magical one-micron barrier. Many thought X-ray lithography would be required to break the barrier, but as it turned out, traditional optical technology did the trick. And the industry marched on. Then, in 2000 or so, the IC industry was nearing the so-called “red brick wall,” which... » read more

FinFET Isolation: Bulk vs. SOI

Terry Hook of IBM recently contributed an article to ASN about FinFET isolation issues on bulk vs. SOI.  It generated immense interest, and created lots of discussion on various LinkedIn groups.  In case you missed it, here it is again. (This article is based on an in-depth presentation Terry gave at the SOI Consortium's Fully-Depleted Tech Workshop, held during VLSI-TSA in Taiwan, April 2... » read more