tag: chemically amplified resists

Realization Of Sub-30-Pitch EUV Lithography Through The Application Of Functional Spin-On Glass
By Brewer Science - 19 Oct, 2022 - Comments: 0

Photoresist metrics such as resolution, roughness, CD uniformity, and overall process window are often aimed to realize the full potential of EUV lithography. From the view of the materials supplier, improvements over the aforementioned metrics can be achieved by optimizing the functional materials used under the resist. The underlayers can significantly enhance the resist performance by provid... » read more

Nanosheet FETs Drive Changes In Metrology And Inspection
By Karen Heyman - 09 Aug, 2022 - Comments: 0

In the Moore’s Law world, it has become a truism that smaller nodes lead to larger problems. As fabs turn to nanosheet transistors, it is becoming increasingly challenging to detect line-edge roughness and other defects due to the depths and opacities of these and other multi-layered structures. As a result, metrology is taking even more of a hybrid approach, with some well-known tools moving... » read more

High-NA EUV May Be Closer Than It Appears
By Katherine Derbyshire - 16 Jun, 2022 - Comments: 1

High-NA EUV is on track to enable scaling down to the Angstrom level, setting the stage for chips with even higher transistor counts and a whole new wave of tools, materials, and system architectures. At the recent SPIE Advanced Lithography conference, Mark Phillips, director of lithography hardware and solutions at Intel, reiterated the company’s intention to deploy the technology in high... » read more

Big Changes In Materials And Processes For IC Manufacturing
By Ed Sperling And Laura Peters - 21 Apr, 2022 - Comments: 3

Rama Puligadda, CTO at Brewer Science, sat down with Semiconductor Engineering to talk about a broad set of changes in semiconductor manufacturing, packaging, and materials, and how that will affect reliability, processes, and equipment across the supply chain. SE: What role do sacrificial materials play in semiconductor manufacturing, and how is that changing at new process nodes? Puliga... » read more

Strategies For Faster Yield Ramps On 5nm Chips
By Laura Peters - 12 Apr, 2022 - Comments: 0

Leading chipmakers TSMC and Samsung are producing 5nm devices in high volume production and TSMC is forging ahead with plans for first 3nm silicon by year end. But to meet such aggressive targets, engineers must identify defects and ramp yield faster than before. Getting a handle on EUV stochastic defects — non-repeating patterning defects such as microbridges, broken lines, or missing con... » read more

Gearing Up For High-NA EUV
By Mark LaPedus - 21 Oct, 2021 - Comments: 2

The semiconductor industry is moving full speed ahead to develop high-NA EUV, but bringing up this next generation lithography system and the associated infrastructure remains a monumental and expensive task. ASML has been developing its high-numerical aperture (high-NA) EUV lithography line for some time. Basically, high-NA EUV scanners are the follow-on to today’s EUV lithography systems... » read more

Finding, Predicting EUV Stochastic Defects
By Mark LaPedus - 17 Jun, 2021 - Comments: 0

Several vendors are rolling out next-generation inspection systems and software that locates problematic defects in chips caused by processes in extreme ultraviolet (EUV) lithography. Each defect detection technology involves various tradeoffs. But it’s imperative to use one or more of them in the fab. Ultimately, these so-called stochastic-induced defects caused by EUV can impact the perf... » read more

Why New Photoresist Technology Is Critical
By Rich Wise - 18 Mar, 2021 - Comments: 0

As chipmakers move to advanced technology nodes, they are challenged to resolve ever finer features. One of the major roadblocks involves the material used to transfer chip design to the wafer. That material is rapidly reaching its limit to accurately transfer designs. To keep next-generation device scaling on track, a breakthrough technology has been introduced: dry resist. To better understan... » read more

Searching For EUV Defects
By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Chipmakers hope to insert extreme ultraviolet (EUV) lithography at 7nm and/or 5nm, but several challenges need to be solved before this oft-delayed technology can be used in production. One lingering issue that is becoming more worrisome is how to find defects caused by [gettech id="31045" comment="EUV"] processes. These processes can cause random variations, also known as stochastic effects... » read more

Inside EUV Resists
By Mark LaPedus - 17 Nov, 2016 - Comments: 3

Andrew Grenville, chief executive of resist maker Inpria, sat down with Semiconductor Engineering to talk about photoresists for extreme ultraviolet (EUV) lithography. What follows are excerpts of that conversation. SE: Photoresists are a critical part of lithography. Resists are light-sensitive materials. They form patterns on a surface when exposed to light. For EUV, they are critical. Wha... » read more

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