One Micron Damascene Redistribution for Fan-Out Wafer Level Packaging Using a Photosensitive Dielectric Material


Authors: Warren W. Flack, Robert Hsieh, Ha-Ai Nguyen Ultratech, a division of Veeco 3050 Zanker Road, San Jose, CA 95134 USA [email protected] John Slabbekoorn, Samuel Suhard, Andy Miller IMEC Kapeldreef 75 B-3001 Leuven, Belgium [email protected] Akito Hiro, Romain Ridremont JSR MICRO NV Technologielaan 8 B-3001 Leuven, Belgium [email protected] Abstract This... » read more

Can Copper Revolutionize Interconnects Again?


Electromigration and resistivity present serious obstacles to interconnect scaling, as previously discussed. In a copper damascene process, grain growth is constrained by the narrow trenches into which copper is deposited. As the grain size approaches the mean free path of electrons in copper, electron scattering at sidewalls and grain boundaries increases and resistivity jumps. Meanwhile, incr... » read more

What Will Replace Dual Damascene?


By Mark LaPedus In the mid-1990s, IBM announced the world’s first devices using a copper dual damascene process. At the time, the dual damascene manufacturing process was hailed as a major breakthrough. The new copper process enabled IC makers to scale the tiny interconnects in a device, as the previous material, aluminum, faced some major limitations. Dual damascene remains the workhorse... » read more