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Defect Mitigation And Characterization In Silicon Hardmask Materials


From SPIE Digital Library: In this study, metal contaminants, liquid particle count and on-wafer defects of Si- HMs and filtration removal rates are monitored to determine the effect of filter type, pore size, media morphology, and cleanliness on filtration performance. 5-nm PTFE NTD2 filter having proprietary surface treatment used in this study shows lowest defect count. Authors: Vineet... » read more

Mask Supply Chain Preps For 10nm


As the semiconductor industry gears up for the 10nm logic node—now likely to begin in the second half of 2017—the photomask supply chain is preparing to grapple with the associated challenges, including dramatic increases in photomask complexity, write times and data volumes. The 10nm node will require more photomasks per mask set, the ability to print smaller and more complex features, ... » read more

Challenges Mount For EUV Masks


ASML Holding’s first production-worthy scanners for extreme ultraviolet (EUV) lithography are expected to ship this year, but there are still a number of challenges to bring the technology into high-volume manufacturing. As before, the three main challenges for EUV are the power sources, resists and photomasks. To date, the resists are making progress, while the EUV power sources remain a ... » read more