tag: edge placement error

Mask Economics Shape High-NA EUV Adoption
By Gregory Haley - 22 Jun, 2026 - Comments: 1

Key Takeaways: Mask costs are not stopping leading-edge scaling, but they increasingly influence design, node, and process choices. High-NA EUV will tighten requirements for CD, EPE, local CDU, mask 3D modeling, stitching, and materials. Reduced depth of focus in High-NA EUV will drive new resist, etch, film, and absorber approaches. Experts at the table: Semiconductor Engin... » read more

Curvilinear Masks Push The Limits Of Inspection And Metrology
By Gregory Haley - 27 May, 2026 - Comments: 0

Key Takeaways: Curvilinear masks require native data flows across design, mask data prep, writing, inspection, and metrology. Inspection is shifting from finding all defects to identifying which mask variations actually print on wafer. High-NA EUV will intensify inspection challenges, particularly for small printable defects and actinic contrast limits. Experts at the table... » read more

Mask Technology Faces A New Set Of Challenges
By Gregory Haley - 21 May, 2026 - Comments: 0

Key Takeaways: Mask inspection and repair remain the critical bottleneck, even as multi-beam writers have reduced mask-writing constraints. Curvilinear masks are becoming viable for critical layers, but qualification, metrology, and inspection standards still lag production needs. Scaling curvilinear requires curvilinear-native data flows, model-based checks, GPU/HPC compute, and les... » read more

Overcoming BEOL Patterning Challenges At The 3nm Node
By Assawer Soussou - 20 Nov, 2025 - Comments: 0

As complementary metal-oxide semiconductor (CMOS) area shrinks 50% from one node to the next, interconnect critical dimensions (CD) and pitch (or spacing) are under tight demands. At the N3 node, where metal pitch dimensions must be at or below 18 nm,1,2 one of the main interconnect challenges is securing sufficient process margins for CD and edge placement error (EPE). Achieving the... » read more

Sidestepping Lithography In Chip Manufacturing
By Katherine Derbyshire - 23 May, 2024 - Comments: 0

Rising lithography costs, shrinking feature sizes, and the need for an alternative to copper are collectively spurring new interest in area-selective deposition. An extension of atomic layer deposition, ASD seeks to build circuit features from the bottom up, without relying on lithography. Lithography will remain a critical tool for the foreseeable future. But it has long been the most expen... » read more

BEOL Integration For The 1.5nm Node And Beyond
By Assawer Soussou - 25 Apr, 2022 - Comments: 0

As we approach the 1.5nm node and beyond, new BEOL device integration challenges will be presented. These challenges include the need for smaller metal pitches, along with support for new process flows. Process modifications to improve RC performance, reduce edge placement error, and enable challenging manufacturing processes will all be required. To address these challenges, we investigated th... » read more

Strategies For Faster Yield Ramps On 5nm Chips
By Laura Peters - 12 Apr, 2022 - Comments: 0

Leading chipmakers TSMC and Samsung are producing 5nm devices in high volume production and TSMC is forging ahead with plans for first 3nm silicon by year end. But to meet such aggressive targets, engineers must identify defects and ramp yield faster than before. Getting a handle on EUV stochastic defects — non-repeating patterning defects such as microbridges, broken lines, or missing con... » read more

International Roadmap for Devices and Systems lithography roadmap
By Technical Paper Link - 19 Nov, 2021 - Comments: 0

Abstract: "Background: Planned improvements in semiconductor chip performance have historically driven improvements in lithography and this is expected to continue in the future. The International Roadmap for Devices and Systems roadmap helps the industry plan for the future. Aim: The 2021 lithography roadmap shows requirements, possible options, and challenges for the next 15 years. Resul... » read more

Multi-Patterning EUV Vs. High-NA EUV
By Mark LaPedus - 04 Dec, 2019 - Comments: 4

Foundries are finally in production with EUV lithography at 7nm, but chip customers must now decide whether to implement their next designs using EUV-based multiple patterning at 5nm/3nm or wait for a new single-patterning EUV system at 3nm and beyond. This scenario revolves around ASML’s current extreme ultraviolet (EUV) lithography tool (NXE:3400C) versus a completely new EUV system with... » read more

Using Sensor Data To Improve Yield And Uptime
By Ed Sperling - 21 Feb, 2019 - Comments: 2

Semiconductor equipment vendors are starting to add more sensors into their tools in an effort to improve fab uptime and wafer yield, and to reduce cost of ownership and chip failures. Massive amounts of data gleaned from those tools is expected to provide far more detail than in the past about multiple types and sources of variation, including when and where that variation occurred and how,... » read more

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