tag: electromigration

3D Neuromorphic Architectures
By Katherine Derbyshire - 11 Dec, 2017 - Comments: 1

Matrix multiplication is a critical operation in conventional neural networks. Each node of the network receives an input signal, multiplies it by some predetermined weight, and passes the result to the next layer of nodes. While the nature of the signal, the method used to determine the weights, and the desired result will all depend on the specific application, the computational task is simpl... » read more

How To Build An IoT Chip (Part 2)
By Ed Sperling - 18 Oct, 2017 - Comments: 0

Semiconductor Engineering sat down to discuss IoT chip design issues with Jeff Miller, product marketing manager for electronic design systems in the Deep Submicron Division of [getentity id="22017" e_name="Mentor, a Siemens Business"]; Mike Eftimakis, IoT product manager in [getentity id="22186" e_name="Arm"]'s Systems and Software Group; and John Tinson, vice president of sales at Sondrel Ltd... » read more

Improving Automotive Reliability
By Annapoorna Krishnaswamy - 16 Oct, 2017 - Comments: 0

Semiconductor reliability requirements are rapidly evolving. New applications such as ADAS/self-driving cars and drones are pushing the limits for system reliability. A mobile phone that overheats in your pocket is annoying. In automobiles, it's a much different story. Overheating can impact the operation of backup sensors, which alert the driver that a pedestrian or obstacle is behind them.... » read more

New Power Concerns At 10/7nm
By Ann Mutschler - 16 Oct, 2017 - Comments: 1

As chip sizes and complexity continues to grow exponentially at 7nm and below, managing power is becoming much more difficult. There are a number of factors that come into play at advanced nodes, including more and different types of processors, more chip-package decisions, and more susceptibility to noise of all sorts due to thinner insulation layers and wires. The result is that engineers ... » read more

Power Modeling And Analysis
By Brian Bailey - 27 Sep, 2017 - Comments: 0

Semiconductor Engineering sat down to discuss power modeling and analysis with [getperson id="11489" p_name="Drew Wingard"], CTO at [getentity id="22605" e_name="Sonics"]; [getperson id="11763" comment="Tobias Bjerregaard"], CEO at [getentity id="22908" e_name="Teklatech"]; Vic Kulkarni, vice president and chief strategy officer at [getentity id="22021" e_name="Ansys"]; Andy Ladd, CEO of Baum; ... » read more

Addressing Thermal Reliability In Next-Gen FinFET Designs
By Anusha Prakash - 18 Sep, 2017 - Comments: 0

The next generation of chips on the 10/7nm finFET processes will be able to cram more devices into same area while also boosting performance, but there's a price to pay for that. The 3D fin structures trap heat, so the the temperature rises on the device and there is no way to dissipate that heat. This combination of higher current density, higher performance and higher temperature has a det... » read more

Multi-Physics Combats Commoditization
By Brian Bailey - 14 Sep, 2017 - Comments: 0

The semiconductor industry has benefited greatly from developments around digital circuitry. Circuits have grown in size from a few logic gates in the 1980s to well over 1 billion today. In comparison, analog circuits have increased in size by a factor of 10. The primary reason is that digital logic managed to isolate many of the physical effects from functionality, and to provide abstractions ... » read more

Tech Talk: 7nm Thermal Effects
By Ed Sperling - 14 Sep, 2017 - Comments: 0

ANSYS' Karthik Srinivasan talks about the effect of heat on reliability at advanced process nodes, including self-heating, circuit aging, and how that will affect automotive electronics. https://youtu.be/SS6iAXp0Kn8   Related Tech Talk: 7nm Power Dealing with thermal effects, electromigration and other issues at the most advanced nodes. » read more

Ruthenium Liners Give Way To Ruthenium Lines
By Katherine Derbyshire - 17 Aug, 2017 - Comments: 0

For several years now, integrated circuit manufacturers have been investigating alternative barrier layer materials for copper interconnects. As interconnect dimensions shrink, the barrier accounts for an increasing fraction of the total line volume. As previously reported, both cobalt and ruthenium have drawn substantial interest because they can serve as both barrier and seed layers, minimizi... » read more

How Reliable Are FinFETs?
By Ann Mutschler - 16 Aug, 2017 - Comments: 1

Stringent safety requirements in the automotive and industrial sectors are forcing chipmakers to re-examine a number of factors that can impact reliability over the lifespan of a device. Many of these concerns are not new. Electrical overstress (EOS), electrostatic discharge (ESD) and [getkc id="160" kc_name="electromigration"] (EM) are well understood, and have been addressed by EDA tools f... » read more

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