Addressing Thermal Reliability In Next-Gen FinFET Designs


The next generation of chips on the 10/7nm finFET processes will be able to cram more devices into same area while also boosting performance, but there's a price to pay for that. The 3D fin structures trap heat, so the the temperature rises on the device and there is no way to dissipate that heat. This combination of higher current density, higher performance and higher temperature has a det... » read more

Multi-Physics Combats Commoditization


The semiconductor industry has benefited greatly from developments around digital circuitry. Circuits have grown in size from a few logic gates in the 1980s to well over 1 billion today. In comparison, analog circuits have increased in size by a factor of 10. The primary reason is that digital logic managed to isolate many of the physical effects from functionality, and to provide abstractions ... » read more

Tech Talk: 7nm Thermal Effects


ANSYS' Karthik Srinivasan talks about the effect of heat on reliability at advanced process nodes, including self-heating, circuit aging, and how that will affect automotive electronics. https://youtu.be/SS6iAXp0Kn8   Related Tech Talk: 7nm Power Dealing with thermal effects, electromigration and other issues at the most advanced nodes. » read more

Ruthenium Liners Give Way To Ruthenium Lines


For several years now, integrated circuit manufacturers have been investigating alternative barrier layer materials for copper interconnects. As interconnect dimensions shrink, the barrier accounts for an increasing fraction of the total line volume. As previously reported, both cobalt and ruthenium have drawn substantial interest because they can serve as both barrier and seed layers, minimizi... » read more

How Reliable Are FinFETs?


Stringent safety requirements in the automotive and industrial sectors are forcing chipmakers to re-examine a number of factors that can impact reliability over the lifespan of a device. Many of these concerns are not new. Electrical overstress (EOS), electrostatic discharge (ESD) and [getkc id="160" kc_name="electromigration"] (EM) are well understood, and have been addressed by EDA tools f... » read more

Advanced Packaging Picks Up Steam


The semiconductor industry’s push toward continued miniaturization and increasing complexity is driving wider adoption of system-in-package (SiP) technology. One of the big benefits of [getkc id="199" kc_name="SiP"] is that it allows more features to be squeezed into ever-smaller form factors, such as wearable gadgets and medical implants. So while the individual chips in this package may ... » read more

Tech Talk: 7nm Power


Annapoorna Krishnaswamy, lead applications engineer at ANSYS, talks with Semiconductor Engineering about power-related changes at 7nm and what engineering teams need to watch out for as they move down to the latest process technology. https://youtu.be/Ym46ssJPeHM » read more

New BEOL/MOL Breakthroughs?


Chipmakers are moving ahead with transistor scaling at advanced nodes, but it's becoming more difficult. The industry is struggling to maintain the same timeline for contacts and interconnects, which represent a larger portion of the cost and unwanted resistance in chips at the most advanced nodes. A leading-edge chip consists of three parts—the transistor, contacts and interconnects. The ... » read more

Safety Plus Security: A New Challenge


Nobody has ever integrated safety or security features into their design just because they felt like it. Usually, successive high-profile attacks are needed to even get an industry's attention. And after that, it's not always clear how to best implement solutions or what the tradeoffs are between cost, performance, and risk versus benefit. Putting safety and security in the same basket is a ... » read more

Will Self-Heating Stop FinFETs


New transistor designs and new materials don’t appear out of thin air. Their adoption always is driven by the limitations of the incumbent technology. Silicon germanium and other compound semiconductors are interesting because they promise superior carrier mobility relative to silicon. [getkc id="185" kc_name="FinFET"] transistor designs help minimize short channel effects, a critical limi... » read more

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