tag: GaN

Emerging Apps And Challenges For Packaging
By Mark LaPedus - 23 Nov, 2020 - Comments: 0

Advanced packaging is playing a bigger role and becoming a more viable option to develop new system-level chip designs, but it also presents chipmakers with a confusing array of options and sometimes a hefty price tag. Automotive, servers, smartphones and other systems have embraced advanced packaging in one form or another. For other applications, it's overkill, and a simpler commodity pack... » read more

AI Design In Korea
By Kurt Shuler - 08 Oct, 2020 - Comments: 0

Like many in the semiconductor design businesses, Arteris IP is actively working with the Korean chip companies. This shouldn’t be a surprise. If a company is building an SoC of any reasonable size, it needs network-on-chip (NoC) interconnect for optimal QoS (bandwidth and latency regulation and system-level arbitration) and low routing congestion, even in application-centric designs such as ... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 02 Oct, 2020 - Comments: 0

Chipmakers and OEMs NXP has announced the grand opening of its 150mm (6-inch) RF gallium nitride (GaN) fab in Chandler, Ariz. This is said to be the most advanced fab dedicated to 5G RF power amplifiers in the United States. NXP’s new Chandler-based GaN fab is qualified now, with initial products ramping in the market and expected to reach full capacity by the end of 2020. GaN, a III-V techn... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 28 Aug, 2020 - Comments: 0

Trade As reported, the U.S. recently implemented more restrictions on U.S. chip sales to Huawei. In response, SEMI has released the following statement in response to the new export control rule changes announced by the U.S. Commerce Department: “SEMI recognizes the role of export control measures to address threats to U.S. national security. However, we are very concerned the new export ... » read more

Power Amp Wars Begin For 5G
By Mark LaPedus - 24 Aug, 2020 - Comments: 2

Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a key component that boosts the RF power signals in base stations. It's based on two competitive technologies, silicon-based LDMOS or RF gallium nitride (GaN). GaN, a III-V technology, outperforms ... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 07 Aug, 2020 - Comments: 0

Chipmakers Nvidia is in advanced talks to acquire Arm from Softbank, according to numerous reports. In addition, TSMC and Foxconn are looking at possible investments or stakes in Arm, according to a report from Nikkei Asia Review. Infineon posted mixed results for the third quarter of the 2020 fiscal year. "Infineon has so far coped well with the challenging situation caused by the coronavi... » read more

Beyond-Line-Of-Sight Troposcatter Communications Primer
By Kasyap Patel - 16 Jul, 2020 - Comments: 0

Though tropospheric scatter (troposcatter, or tropo) communications technology has existed since the 1950s and was used by the U.S. military from 1960 to 2002, this legacy technology is being revitalized in the wake of concerns around the reliability of tactical satellite communications (Satcom). For several decades, satellites were a reliable and secure method of communications that provided s... » read more

Atomic Layer Etch Expands To New Markets
By Mark LaPedus - 16 Jul, 2020 - Comments: 0

The semiconductor industry is developing the next wave of applications for atomic layer etch (ALE), hoping to get a foothold in some new and emerging markets. ALE, a next-generation etch technology that removes materials at the atomic scale, is one of several tools used to process advanced devices in a fab. ALE moved into production for select applications around 2016, although the technolog... » read more

Improving Reliability For GaN And SiC
By Mark LaPedus - 18 Jun, 2020 - Comments: 2

Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in systems, they must prove to be reliable. As with previous products, suppliers are quick to point out that the new devices are reliable, although there are some issues that can occasionally surface... » read more

Manufacturing Bits: June 16
By Mark LaPedus - 16 Jun, 2020 - Comments: 0

GaN power modules Gallium-nitride (GaN) devices are emerging in several markets, such as power semiconductors and RF. GaN, a binary III-V compound, is a wide-bandgap technology, meaning it is faster and more efficient than silicon-based devices. GaN has 10 times the breakdown field strength with double the electron mobility than silicon. Generally, some GaN vendors don’t use a traditio... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy