tag: III-V materials

More Problems Ahead
By Ed Sperling - 25 Aug, 2014 - Comments: 0

Semiconductor Engineering sat down to discuss future scaling problems with Lars Liebmann, a fellow at IBM; Adam Brand, managing director of transistor technology at Applied Materials; Karim Arabi, vice president of engineering at Qualcomm; and Srinivas Banna, a fellow for advanced technology architecture at GlobalFoundries. SE: There seems to be some debate in this group about whether we’r... » read more

Will 7nm And 5nm Really Happen?
By Mark LaPedus - 19 Jun, 2014 - Comments: 11

As leading-edge chipmakers continue to ramp up their 28nm and 20nm devices, vendors are also updating their future technology roadmaps. In fact, IC makers are talking about their new shipment schedules for 10nm. And GlobalFoundries, Intel, Samsung and TSMC are narrowing down the options for 7nm, 5nm and beyond. There is a high probability that IC makers can scale to 10nm, but vendors face a ... » read more

SEMICON West Preview
By SEMI - 19 May, 2014 - Comments: 0

By Paula Doe The fast growing demand for bandwidth is driving telecomm and data center user interest in moving high speed optical connections closer and closer to the chips, as recent advances in packaging technology, from microbumping to bonding to wafer-level redistribution now help make it possible. Chip-to-chip and chip-to-board optical connections increasingly look like a viable soluti... » read more

Shootout At 28nm
By Ed Sperling - 15 May, 2014 - Comments: 0

By Ed Sperling & Mark LaPedus Samsung, Soitec and STMicroelectronics are joining forces on 28nm FD-SOI, creating a showdown with TSMC and others over the best single-patterned processes and materials and raising questions about how quickly companies need to move to the finFET technology generation. The multi-source manufacturing collaboration agreement for fully depleted silicon-on-insulato... » read more

Power Moves Up To First Place
By Ed Sperling - 10 Apr, 2014 - Comments: 2

Virtually every presentation delivered about semiconductor design or manufacturing these days—and every end product specification that uses advanced technology—incorporates some reference to power and/or energy. It has emerged as the most persistent, most problematic, and certainly the most talked about issue from conception to marketplace adoption. And the conversation only grows louder... » read more

Executive Insight: Luc Van den hove
By Mark LaPedus - 20 Feb, 2014 - Comments: 1

Semiconductor Engineering sat down to discuss current and future process technology challenges with Luc Van den hove, president and chief executive of Imec. What follows are excerpts of that conversation. SE: The industry is simultaneously working on several new and expensive technologies. This includes extreme ultraviolet (EUV) lithography and the next-generation 450mm wafer size. The indu... » read more

The List Of Unknowns Grows After Silicon
By Katherine Derbyshire - 07 Feb, 2014 - Comments: 3

As discussed earlier in this series, most proposed alternative channel schemes depend on germanium channels for pMOS transistors, and InGaAs channels for nMOS transistors. Of the two materials, InGaAs poses by far the more difficult integration challenges. Germanium has been present in advanced silicon CMOS fabs for several technology generations, having been introduced used in strained silicon... » read more

Week In Review: System-Level Design
By Ed Sperling - 07 Feb, 2014 - Comments: 0

Cadence agreed to buy Forte Design Systems for an undisclosed sum, adding further proof that the market for high-level synthesis and tools that run at higher levels of abstraction is finally hitting its stride. Behind this acquisition is a rising pain level due to increasing complexity in SoCs—IP integration, low power concerns and much more of everything, from transistors to memories—has f... » read more

Executive Viewpoint: Qualcomm On Process Technology
By Mark LaPedus - 23 Jan, 2014 - Comments: 3

Semiconductor Engineering sat down to discuss current and future process technology challenges with Geoffrey Yeap, vice president of technology at Qualcomm. SE: You have pointed out there is a fundamental shift taking place at the 28nm logic node. This is the first node in which mobile chips have been ramped up first within the foundries, ahead of computing-based ICs. Many believe that 28nm ... » read more

What’s After Silicon?
By Katherine Derbyshire - 09 Jan, 2014 - Comments: 4

As discussed in the first article in this series, germanium is one of the leading candidates to succeed silicon as the channel material for advanced transistors, and has been for several years. The fundamental challenges of germanium integration were detailed at length in 2007. Unfortunately, knowing what the issues are does not necessarily lead to a solution. When a MOSFET transistor turns ... » read more

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