Alternative Channel Materials For Post-Silicon FinFETs

By Katherine Derbyshire - 16 Dec, 2013 - Comments: 4

At first glance, other semiconductors always have looked more attractive to device designers than silicon. Both germanium and III-V compound semiconductors have higher carrier mobility, allowing faster switching at the same device size. And yet, as manufacturers begin to consider alternative channel materials for sub-10nm devices, the industry is remembering why silicon became a standard in ... » read more

System Bits: Dec. 10

By Brian Bailey - 10 Dec, 2013 - Comments: 0

Lasers From Nano Wires A few weeks ago, Semiconductor Engineering published a special report about silicon photonics and concentrated on the integration of the laser onto the silicon surface. Growing III-V materials on silicon is problematic because of the lattice mismatch, but researchers at the Technische Universität München (TUM) may have found a way around that problem. Thread-like semic... » read more

Is There Light At The End Of Moore’s Tunnel

By Brian Bailey - 22 Nov, 2013 - Comments: 2

Electrons are slow, clumsy and quite easily distracted. They’re slow because it now takes a signal longer to cross a chip than the period of the clock signal. They often don’t travel in straight lines as they collide with other atoms. And electromagnetic interference between adjacent signals can mess with the information they are transferring. On the other hand, light has none of these p... » read more

What’s After 10nm?

By Mark LaPedus - 14 Nov, 2013 - Comments: 0

For some time, chipmakers have roughly doubled the transistor count at each node, while simultaneously cutting the cost by around 29%. IC scaling, in turn, enables faster and lower cost chips, which ultimately translates into cheaper electronic products with more functions. Consumers have grown accustomed to the benefits of Moore’s Law, but the question is for how much longer? Chips based ... » read more

Experts At The Table: Process Technology Challenges

By Mark LaPedus - 05 Sep, 2013 - Comments: 0

By Mark LaPedus Semiconductor Manufacturing & Design sat down to discuss future transistor, process and manufacturing challenges with Subramani Kengeri, vice president of advanced technology architecture at GlobalFoundries; Carlos Mazure, chief technical officer at Soitec; Raj Jammy, senior vice president and general manager of the Semiconductor Group at Intermolecular; and Girish Dixit, v... » read more

It’s A Materials World

By Mark LaPedus - 15 Aug, 2013 - Comments: 0

By Mark LaPedus At a recent event, Intel’s fab materials guru described a nightmarish occurrence that nearly brought the chip giant to its knees. Tim Hendry, director of fab materials and vice president of the Technology and Manufacturing Group at Intel, said the company obtained a critical material from an undisclosed supplier. “This large sub-supplier, a very large chemical company, m... » read more

Materials, Software And Techniques

By Ed Sperling - 26 Jul, 2013 - Comments: 0

The future of advanced semiconductor technology is about to split evenly into three different areas. On the leading edge of manufacturing, Applied Materials CEO Mike Splinter called it correctly—it’s all about materials. Just shrinking features isn’t buying much anymore. In fact, at advanced nodes, with extra margin built into designs, it frequently doesn’t buy anything except extra ... » read more

450mm: Out Of Sync

By Mark LaPedus - 18 Jul, 2013 - Comments: 0

By Mark LaPedus The IC industry has been talking about it for ages, but vendors are finally coming to terms with a monumental shift in the business. The vast changes involve a pending and critical juncture, where the 450mm wafer size transition, new device architectures and other technologies will likely converge at or near the same time. In one possible scenario, 450mm fabs are projected ... » read more

Getting Ready For High-Mobility FinFETs

By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its second-generation finFET devices at 14nm by year’s end, with plans to debut its 11nm technology by 2015. Hoping to close the gap with Intel, silicon foundries are accelerating their efforts t... » read more

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tag: III-V materials

Alternative Channel Materials For Post-Silicon FinFETs

System Bits: Dec. 10

Is There Light At The End Of Moore’s Tunnel

What’s After 10nm?

Experts At The Table: Process Technology Challenges

It’s A Materials World

Materials, Software And Techniques

450mm: Out Of Sync

Getting Ready For High-Mobility FinFETs

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