tag: KAIST

Non-destructive Thickness Characterisation of 3D Multilayer Semiconductor Devices Using Optical Spectral Measurements and Machine Learning
By Technical Paper Link - 07 Feb, 2022 - Comments: 0

Abstract: "Three-dimensional (3D) semiconductor devices can address the limitations of traditional two-dimensional (2D) devices by expanding the integration space in the vertical direction. A 3D NOT-AND (NAND) flash memory device ispresently the most commercially successful 3D semiconductor device. It vertically stacks more than 100 semiconductor material layers to provide more storage capac... » read more

Power/Performance Bits: June 7
By Jesse Allen - 07 Jun, 2021 - Comments: 0

Commercializing photonic MEMS Researchers from the University of California Berkeley, Daegu Gyeongbuk Institute of Science & Technology, SUSS MicroOptics, TSI Semiconductors, Gwangju Institute of Science and Technology, KAIST, Ecole Polytechnique Fédérale de Lausanne (EPFL), and Korea Polytechnic University demonstrated a path for commercial fabrication of photonic MEMS. Photonic MEMS... » read more

Power/Performance Bits: Nov. 17
By Jesse Allen - 17 Nov, 2020 - Comments: 0

NVMe controller for research Researchers at the Korea Advanced Institute of Science and Technology (KAIST) developed a non-volatile memory express (NVMe) controller for storage devices and made it freely available to universities and research institutions in a bid to reduce research costs. Poor accessibility of NVMe controller IP is hampering academic and industrial research, the team argue... » read more

AI Design In Korea
By Kurt Shuler - 08 Oct, 2020 - Comments: 0

Like many in the semiconductor design businesses, Arteris IP is actively working with the Korean chip companies. This shouldn’t be a surprise. If a company is building an SoC of any reasonable size, it needs network-on-chip (NoC) interconnect for optimal QoS (bandwidth and latency regulation and system-level arbitration) and low routing congestion, even in application-centric designs such as ... » read more

Logic Chip, Heal Thyself
By Susan Rambo And Ed Sperling - 11 Feb, 2020 - Comments: 0

If a single fault can kill a logic chip, that doesn’t bode well for longevity of complex multi-chip systems. Obsolescence in chips is not just an industry ploy to sell more chips. It is a fact of physics that chips don’t last more than a few years, especially if overheated, and hit with higher voltage than it can stand. The testing industry does a great job finding defects during manufac... » read more

Finding Defects In IC Packages
By Mark LaPedus - 17 Dec, 2019 - Comments: 0

Several equipment makers are ramping up new inspection equipment to address the growing defect challenges in IC packaging. At one time, finding defects in packaging was relatively straightforward. But as packaging becomes more complex, and as it is used in markets where reliability is critical, finding defects is both more difficult and more important. This has prompted the development of a ... » read more

Power/Performance Bits: Nov. 25
By Jesse Allen - 25 Nov, 2019 - Comments: 0

Rigid or flexible in one device Researchers at the Korea Advanced Institute of Science and Technology (KAIST), Electronics and Telecommunications Research Institute (ETRI) in Daejeon, University of Colorado Boulder, Washington University in St. Louis, Cornell University, and Georgia Institute of Technology proposed a system that would allow electronics to transform from stiff devices to flexib... » read more

Power/Performance Bits: Mar. 26
By Jesse Allen - 26 Mar, 2019 - Comments: 0

Material holds both electrons, holes Researchers at Ohio State University discovered a material that can hold both electrons and holes. They hope the material, the layered metal crystal NaSn2As2, could simplify electronics, potentially removing the need for multiple layers or materials. "It is this dogma in science, that you have electrons or you have holes, but you don't have both. But our... » read more

Manufacturing Bits: Jan. 2
By Mark LaPedus - 02 Jan, 2019 - Comments: 0

Better nanowire MOSFETs At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Applied Materials presented a paper on a new and improved way to fabricate vertically stacked gate-all-around MOSFETs. More specifically, Imec and Applied reported on process improvements for a silicon nanowire MOSFET, which is integrated in a CMOS dual work function metal replacement metal ga... » read more

Manufacturing Bits: Nov. 21
By Mark LaPedus - 21 Nov, 2017 - Comments: 0

Germanium-on-mica Germanium is an element that can be used in various applications in electronics, such as optoelectronics, semiconductors and others. For example, silicon-germanium (SiGe), an alloy of silicon and germanium, is used for making RF chips. In future finFET transistors, some are exploring the idea of using pure germanium for the PFET structure to boost the electron mobility in ... » read more

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