Blog Review: Sept. 28


Cadence's Paul McLellan shares more highlights from the recent Hot Chips, including some very large chips and accelerators for AI and deep learning, new networks and switches, and mobile and edge processors. Synopsys' Marc Serughetti considers the different use cases for digital twins in automotive and how they can help determine the impact of software on verification, test, and validation a... » read more

How Does Line Edge Roughness (LER) Affect Semiconductor Performance At Advanced Nodes?


BEOL metal line RC delay has become a dominant factor that limits chip performance at advanced nodes [1]. Smaller metal line pitches require a narrower line CD and line to line spacing, which introduces higher metal line resistance and line to line capacitance. This is demonstrated in figure 1, which displays a simulation of line resistance vs. line CD across different BEOL metals. Even without... » read more

Week In Review: Manufacturing, Test


President Biden signed an executive order on Sept. 15, limiting foreign investments in U.S. technology by "competitor or adversarial nations" that are deemed a threat to national security. In the past, the Committee on Foreign Investment in the United States (CFIUS) largely limited its actions to the sale of U.S. companies. The new directive expands that to include investments involving "U.S. s... » read more

How To Compare Chips


Traditional metrics for semiconductors are becoming much less meaningful in the most advanced designs. The number of transistors packed into a square centimeter only matters if they can be utilized, and performance per watt is irrelevant if sufficient power cannot be delivered to all of the transistors. The consensus across the chip industry is that the cost per transistor is rising at each ... » read more

A Study Of The Impact Of Line Edge Roughness On Metal Line Resistance Using Virtual Fabrication


BEOL metal line RC delay has become a dominant factor limiting chip operation speeds at advanced nodes. This is because smaller metal line pitches require narrower line CD and line-to-line spacing, which introduces higher metal line resistance and line-to-line capacitance. A surface scattering effect is the root cause for the exponentially increased metal resistivity at smaller metal line pitch... » read more

The High Price Of Smaller Features


The semiconductor industry’s push for higher numerical apertures is driven by the relationship between NA and critical dimension. As the NA goes up, the CD goes down: Where λ is the wavelength and k1 is a process coefficient. While 0.55 NA exposure systems will improve resolution, Larry Melvin, principal engineer at Synopsys, noted that smaller features always come with a process cos... » read more

MicroLEDs Move Toward Commercialization


The market for MicroLED displays is heating up, fueled by a raft of innovations in design and manufacturing that can increase yield and reduce prices, making them competitive with LCD and OLED devices. MicroLED displays are brighter and higher contrast than their predecessors, and they are more efficient. Functional prototypes have been developed for watches, AR glasses, TVs, signage, and au... » read more

Blog Review: Aug. 24


Synopsys' Manuel Mota presents an overview of some of the newest multi-chip module packaging types and their advantages and disadvantages for different kinds of applications, as well as the importance of die-to-die interfaces. Cadence's Steve Brown finds that innovative products require that electronics be analyzed in the context of the environment in which they run, making mechanical and el... » read more

Big Changes In Architectures, Transistors, Materials


Chipmakers are gearing up for fundamental changes in architectures, materials, and basic structures like transistors and interconnects. The net result will be more process steps, increased complexity for each of those steps, and rising costs across the board. At the leading-edge, finFETs will run out of steam somewhere after the 3nm (30 angstrom) node. The three foundries still working at th... » read more

3D NAND Virtual Process Troubleshooting And Investigation


Modern semiconductor processes are extremely complicated and involve thousands of interacting individual process steps. During the development of these process steps, roadblocks and barriers are often encountered in the form of unanticipated negative interactions between upstream and downstream process modules. These barriers can create a long delay in the development cycle and increase costs. ... » read more

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