tag: lithography

Challenges At 3/2nm
By Ed Sperling - 15 Sep, 2020 - Comments: 0

David Fried, vice president of computational products at Lam Research, talks about issues at upcoming process nodes, the move to EUV lithography and nanosheet transistors, and how process variation can affect yield and device performance. » read more

New Architectures, Much Faster Chips
By Ed Sperling and Ann Mutschler - 31 Aug, 2020 - Comments: 0

The chip industry is making progress in multiple physical dimensions and with multiple architectural approaches, setting the stage for huge performance increases based on more modular and heterogeneous designs, new advanced packaging options, and continued scaling of digital logic for at least a couple more process nodes. A number of these changes have been discussed in recent conferences. I... » read more

Development Of Planarizing Spin-On Carbon Materials For High-Temperature Processes
By Brewer Science - 20 Aug, 2020 - Comments: 0

Multilayer lithography is used for advanced semiconductor processes to pattern complex structures. As more and more procedures incorporate a high-temperature process, such as chemical vapor deposition (CVD), the need for thermally stable materials increases. For certain applications, a spin-on carbon (SOC) layer under the CVD layer is required to survive through a high-temperature process. ... » read more

Advanced Materials For High-Temperature Process Integration
By James Lamb - 16 Jul, 2020 - Comments: 0

From the last several lithography nodes, in the 14 to 10nm range, to the latest nodes, in the 7 to 5nm range, the requirements for patterning and image transfer materials have increased dramatically. One of the key pinch points is the tradeoff between planarization and the high-temperature stability required from carbon films used in patterning and post-patterning process integration. Patter... » read more

Super Planarizing Material For Trench And Via Arrays
By Brewer Science - 21 May, 2020 - Comments: 0

As device design scales and becomes more complex, fine control of patterning and transfer steps is integral. Planarization of deep trenches and via arrays has always been a challenge. Aspect ratios continue to increase while critical dimensions shrink, and typical trench fill schemes are no longer able to meet the fill and planarization requirements. Traditional design of spin-on carbon (SOC) m... » read more

Improving EUV Process Efficiency
By Mark LaPedus - 19 Mar, 2020 - Comments: 2

The semiconductor industry is rethinking the manufacturing flow for extreme ultraviolet (EUV) lithography in an effort to improve the overall process and reduce waste in the fab. Vendors currently are developing new and potentially breakthrough fab materials and equipment. Those technologies are still in R&D and have yet to be proven. But if they work as planned, they could boost the flo... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 28 Feb, 2020 - Comments: 2

SPIE At the SPIE Advanced Lithography conference, Lam Research has introduced a new dry resist technology for extreme ultraviolet (EUV) lithography. Dry resist technology is a new approach to deposit and develop EUV resists. It is a dry deposition technique with alternate compositions and mechanisms. By combining Lam’s deposition and etch process expertise with partnerships with ASML a... » read more

Extreme Quality Semiconductor Manufacturing
By Ben Tsai - 11 Feb, 2020 - Comments: 0

By Ben Tsai and Cathy Perry Sullivan Across the full range of semiconductor device types and design nodes, there is a drive to produce chips with significantly higher quality. Automotive, IoT and other industrial applications require chips that achieve very high reliability over a long period of time, and some of these chips must maintain reliable performance while operating in an environmen... » read more

Finding Defects In EUV Masks
By Mark LaPedus - 23 Jan, 2020 - Comments: 0

Extreme ultraviolet (EUV) lithography is finally in production at advanced nodes, but there are still several challenges with the technology, such as EUV mask defects. Defects are unwanted deviations in chips, which can impact yield and performance. They can crop up during the chip manufacturing process, including the production of a mask or photomask, sometimes called a reticle. Fortunately... » read more

Multi-Patterning EUV Vs. High-NA EUV
By Mark LaPedus - 04 Dec, 2019 - Comments: 4

Foundries are finally in production with EUV lithography at 7nm, but chip customers must now decide whether to implement their next designs using EUV-based multiple patterning at 5nm/3nm or wait for a new single-patterning EUV system at 3nm and beyond. This scenario revolves around ASML’s current extreme ultraviolet (EUV) lithography tool (NXE:3400C) versus a completely new EUV system with... » read more

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