tag: metrology

Metrology Strategies For 2nm Processes
By Laura Peters - 07 Mar, 2023 - Comments: 3

Metrology and wafer inspection processes are changing to keep up with evolving and new device applications. While fab floors still have plenty of OCD tools, ellipsometers, and CD-SEMs, new systems are taking on the increasingly 3D nature of structures and the new materials they incorporate. For instance, processes like hybrid bonding, 3D NAND flash devices, and nanosheet FETs are pushing the bo... » read more

A Journey Of Innovation
By Noa Shinar-Ron - 07 Mar, 2023 - Comments: 0

When Dr. Shay Wolfling, a physics expert, joined Nova as its CTO about 11 years ago, very little about the company was the same as it is today. Over the past decade, Nova has experienced tremendous growth, acquiring two companies, significantly increasing its revenue and employee count, and shifting its technology direction and product lines. Yet, one constant remains: commitment to innovation ... » read more

Ion Implantation Applications For In-Line SIMS Metrology
By Wei Ti Lee - 13 Feb, 2023 - Comments: 0

By Wei Ti Lee, Sarah Okada, Lawrence Rooney, Feng Zhang, and Benjamin Hickey In the semiconductor industry, ion implantation process has expanded to a wide range of applications with doses and energies spanning several orders of magnitude. Ion implantation is a very complicated process with many parameters and factors that affect the implant profile. For example, shadowing effects from high... » read more

Ion Implantation Applications For In-Line SIMS Metrology
By Nova - 08 Feb, 2023 - Comments: 0

In the semiconductor industry, ion implantation process has expanded to a wide range of applications with doses and energies spanning several orders of magnitude. Ion implantation is a very complicated process with many parameters and factors that affect the implant profile. For example, shadowing effects from higher aspect ratio of photoresist opening, ion channeling or de-channeling effect... » read more

Unknowns And Challenges In Advanced Packaging
By Ed Sperling - 19 Jan, 2023 - Comments: 0

Dick Otte, CEO of Promex Industries, sat down with Semiconductor Engineering to talk about unknowns in material properties, the impact on bonding, and why environmental factors are so important in complex heterogeneous packages. What follows are excerpts of that conversation. SE: Companies have been designing heterogeneous chips to take advantage of specific applications or use cases, but th... » read more

Scatterometry-Based Methodologies For Characterization Of MRAM Technology
By Nova - 18 Jan, 2023 - Comments: 0

Magnetoresistive random-access memory (MRAM) technology and recent developments in fabrication processes have shown it to be compatible with Si-based complementary metal oxide semiconductor (CMOS) technologies. The perpendicular spin transfer torque MRAM (STT-MRAM) configuration opened up opportunities for an ultra-dense MRAM evolution and was most widely adapted for its scalability. Insertion ... » read more

A New Dimension In Optical CD
By Ilya Osherov - 15 Dec, 2022 - Comments: 0

One of the biggest challenges for nanoscale fabrication is how to measure devices on such a minute scale. As the semiconductor industry demands ever smaller devices, the need for reliable, robust measurements for quality control and process optimization increases. One robust and commonly used technique in semiconductor manufacturing is optical critical dimension (OCD) metrology. Standard, al... » read more

Metrology Sampling Plans Are Key For Device Analytics And Traceability
By Mike McIntyre - 06 Dec, 2022 - Comments: 0

A mother steps on the brakes, bringing her car to a stop as she drops her kids off for dance lessons. At the time, she doesn't notice anything wrong, but when she takes her car in for its regular service appointment, the mechanic conducts a diagnostic check and discovers that the primary brake system on the car had failed because of a faulty braking controller without anyone realizing it. Fortu... » read more

Metrology Of Thin Resist For High NA EUVL
By Nova - 16 Nov, 2022 - Comments: 0

One of the many constrains of high numerical aperture extreme ultraviolet lithography (High NA EUVL) is related to resist thickness. In fact, one of the consequences of moving from current 0.33NA to 0.55NA (high NA) is the depth of focus (DOF) reduction. In addition, as the resist feature lines shrink down to 8nm half pitch, it is essential to limit the aspect ratio to avoid pattern collapse. T... » read more

Methods To Overcome Limited Labeled Data Sets In Machine Learning-Based Optical Critical Dimension Metrology
By Onto Innovation - 07 Sep, 2022 - Comments: 0

With the aggressive scaling of semiconductor devices, the increasing complexity of device structure coupled with tighter metrology error budget has driven up Optical Critical Dimension (OCD) time to solution to a critical point. Machine Learning (ML), thanks to its extremely fast turnaround, has been successfully applied in OCD metrology as an alternative solution to the conventional physical... » read more

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