tag: Peking University

Research Bits: Mar. 25
By Jesse Allen - 25 Mar, 2025 - Comments: 0

2D materials in 3D transistors Researchers at the University of California Santa Barbara investigated 3D gate-all-around (GAA) transistors made using 2D semiconductors. They considered three different approaches to channel stacking: nano-sheet FETs, nano-fork FETs, and nano-plate FETs. The nano-plate FET architecture, which exploits lateral stacking of 2D layers, was found to maximize the g... » read more

Chip Industry Technical Paper Roundup: Feb. 25
By Liz Allan - 25 Feb, 2025 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=408 /] Find all technical papers here. » read more

HW-Aligned Sparse Attention Architecture For Efficient Long-Context Modeling (DeepSeek et al.)
By Technical Paper Link - 18 Feb, 2025 - Comments: 0

A new technical paper titled "Native Sparse Attention: Hardware-Aligned and Natively Trainable Sparse Attention" was published by DeepSeek, Peking University and University of Washington. Abstract "Long-context modeling is crucial for next-generation language models, yet the high computational cost of standard attention mechanisms poses significant computational challenges. Sparse attention... » read more

Research Bits: Feb. 4
By Jesse Allen - 04 Feb, 2025 - Comments: 0

High-power diamond transistors Researchers from the University of Glasgow, RMIT University, and Princeton University created a new diamond transistor for high-power electronics that remains switched off by default. The performance of the diamond was improved by coating it in hydrogen atoms followed by layers of aluminum oxide. “The challenge for power electronics is that the design of the... » read more

Improving GaN Device Architectures
By Katherine Derbyshire - 23 Jan, 2025 - Comments: 0

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits use different materials for different parts of the overall operating range. GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and... » read more

Backpropagation Algorithm On Neuromorphic Spiking HW (U. Of Zurich, ETH Zurich, LANL)
By Technical Paper Link - 25 Nov, 2024 - Comments: 0

A new technical paper titled "The backpropagation algorithm implemented on spiking neuromorphic hardware" was published by University of Zurich, ETH Zurich, Los Alamos National Laboratory, Royal Institution, London, et al. "This study presents a neuromorphic, spiking backpropagation algorithm based on synfire-gated dynamical information coordination and processing implemented on Intel’s Lo... » read more

Roadmap To Neuromorphic Computing (Collaboration of 27 Universities/Companies)
By Technical Paper Link - 09 Jul, 2024 - Comments: 0

A technical paper titled “Roadmap to Neuromorphic Computing with Emerging Technologies” was published by researchers at University College London, Politecnico di Milano, Purdue University, ETH Zurich and numerous other institutions. Summary: "The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, ana... » read more

Chip Industry’s Technical Paper Roundup: October 3
By Liz Allan - 03 Oct, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=150 /] Related Reading Technical Paper Library home » read more

Improving ML-Based Device Modeling Using Variational Autoencoder Techniques
By Technical Paper Link - 27 Sep, 2023 - Comments: 0

A technical paper titled “Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques” was published by researchers at Commonwealth Scientific and Industrial Research Organisation (CSIRO), Peking University, National University of Singapore, and University of New South Wales. Abstract: "The semiconductors industry benefits greatly from the integ... » read more

Ferroelectric Memories Answer Call For Non-Volatile Alternatives
By Katherine Derbyshire - 21 Sep, 2023 - Comments: 0

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and the stability of flash memory. Changing the polarization of ferroelectric domains is extremely fast, and the polarization remains stable without power for years, if not decades. FeFETs, one of ... » read more

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