Ready For Curvilinear: New Innovations For Resistance Extraction


The rapid evolution of semiconductor industry, fueled by the propagation of IOT applications, image sensors, photonics and MEMS applications and other emerging technologies dramatically increased the complexity of IC design. Designers often use unconventional structures to achieve the desired functionality and optimal performance. For example, image sensors use wide polygons in the layout and a... » read more

Electromigration And IR Drop At Advanced Nodes


Manufacturing chips at 3nm and below is a challenge, but it's only part of the problem. Designing chips that can be manufactured and will actually work is potentially an even bigger problem. There is more data to sift through for place-and-route, less margin to pad a design, and there are more physical effects to contend with as transistors get taller, density increases, and chips age. Jeff Wil... » read more

Glitch Power Issues Grow At Advanced Nodes


An estimated 20% to 40% of total power is being wasted due to glitch in some of the most advanced and complex chip designs, and at this point there is no single best approach for how and when to address it, and mixed information about how effective those solutions can be. Glitch power is not a new phenomenon. DSP architects and design engineers are well-versed in the power wasted by long, sl... » read more

Scatterometry-Based Methodologies For Characterization Of MRAM Technology


Magnetoresistive random-access memory (MRAM) technology and recent developments in fabrication processes have shown it to be compatible with Si-based complementary metal oxide semiconductor (CMOS) technologies. The perpendicular spin transfer torque MRAM (STT-MRAM) configuration opened up opportunities for an ultra-dense MRAM evolution and was most widely adapted for its scalability. Insertion ... » read more

The Shortest Path Deception


When manufacturing, assembling, and using integrated circuit (IC) chips, the electrostatic discharge (ESD) caused by accumulated static can damage the IC circuitry if the circuit is not properly protected [1]. To prevent such damage, ESD protection devices are designed into the circuitry such that they will create a low impedance path that limits the peak voltage and current by diverting excess... » read more

Impact Of GAA Transistors At 3/2nm


The chip industry is poised for another change in transistor structure as gate-all-around (GAA) FETs replace finFETs at 3nm and below, creating a new set of challenges for design teams that will need to be fully understood and addressed. GAA FETs are considered an evolutionary step from finFETs, but the impact on design flows and tools is still expected to be significant. GAA FETs will offer... » read more

Advanced mm-Wave And Terahertz Measurements With Cascade Probe Stations


The strong market needs to embed multiple functionalities from different semiconductor processing technologies into a single system continue to drive demands for more advanced 3DIC packaging technologies. Dimensions of copper pillar micro-bumps are consistently reduced in every new technology node to facilitate the 3D stacking of multiple dies so that overall system performance can be improved.... » read more

Slower Metal Bogs Down SoC Performance


Metal interconnect delays are rising, offsetting some of the gains from faster transistors at each successive process node. Older architectures were born in a time when compute time was the limiter. But with interconnects increasingly viewed as the limiter on advanced nodes, there’s an opportunity to rethink how we build systems-on-chips (SoCs). ”Interconnect delay is a fundamental tr... » read more

Lower Resistance Protects Against Failure In IC Design


By Fady Fouad, Esraa Swillam, and Jeff Wilson When you’re fighting off a threat, you typically want all the resistance you can muster. In IC design, on the other hand, minimizing resistance is crucial to success in power structure design. As metals get narrower with technology node advances, resistance levels rise, and voltage drop (IR) and electromigration (EM) issues grow, both in number... » read more

Analog Simulation At 7/5/3nm


Hany Elhak, group director of product management at Cadence, talks with Semiconductor Engineering about analog circuit simulation at advanced nodes, why process variation is an increasing problem, the impact of parasitics and finFET stacking, and what happens when gate-all-around FETs are added into the chip. » read more

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