tag: ruthenium

Impact of Surface States And Band Modulations in Ruthenium Interconnects (Incheon, Hanyang, UT Dallas)
By Technical Paper Link - 11 Apr, 2026 - Comments: 0

A new technical paper, "Role of surface states and band modulations in ultrathin ruthenium interconnects," was published by researchers at Incheon National University, Hanyang University and UT Dallas. Abstract "Mitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based inte... » read more

Research Bits: Jan. 20
By Jesse Allen - 20 Jan, 2026 - Comments: 0

ALD for Ru wiring Researchers from Ulsan National Institute of Science and Technology (UNIST), Hongik University, and Tanaka Precious Metal Technologies developed an atomic layer deposition (ALD) process for creating chip interconnects using a ruthenium (Ru) precursor with a thermal stability up to 400 °C. The high-temperature ALD process can produce dense, high-quality Ru films without deg... » read more

Scaling Memory With Molybdenum
By Katherine Derbyshire - 18 Sep, 2025 - Comments: 2

Molybdenum is looking increasingly promising as a replacement for a variety of metals commonly used in semiconductor manufacturing today, especially at leading-edge nodes. One by one, chipmakers are crossing metals off the list at advanced nodes. While ruthenium liners are nearly ready for production, the metal is not ready to replace copper in highly scaled interconnects. Ruthenium is very ... » read more

The End Of Copper Interconnects?
By Katherine Derbyshire - 21 Aug, 2025 - Comments: 0

After nearly three decades, the era of copper interconnects may be coming to an end. Sort of. At interconnect CDs below 10nm, copper is no longer the best metallization choice. Yet it remains unsurpassed for larger features. The most serious challenge to continued copper scaling is the metal’s dramatic increase in resistivity at dimensions below its relatively large (40nm) mean free path l... » read more

Interconnects Approach Tipping Point
By Laura Peters - 20 Feb, 2025 - Comments: 0

As leading devices move to next generation nanosheets for logic, their interconnections are getting squeezed past the point where they can deliver low resistance pathways. The 1nm (10Å) node will have 20nm pitch and larger metal lines, but the interconnect stack already consumes a third of device power and accounts for 75% of the chip's RC delay. Changing this dynamic requires a superior co... » read more

Ruthenium Interconnects On Tap
By Katherine Derbyshire - 20 Jun, 2024 - Comments: 0

Chipmakers' focus on new interconnect technology is ramping up as copper's effectiveness continues to diminish, setting the stage for a significant shift that could improve performance and reduce heat at future nodes and in advanced packages. The introduction of copper interconnects in 1997 upended the then-standard tungsten via/aluminum line metallization scheme. Dual damascene integration ... » read more

Interconnects: Criteria For Alternative Metal Benchmarking And Selection (Imec, KU Leuven)
By Technical Paper Link - 19 Jun, 2024 - Comments: 0

A technical paper titled “Selecting Alternative Metals for Advanced Interconnects” was published by researchers at imec and KU Leuven. Abstract “Today, interconnect resistance and reliability are key limiters for the performance of advanced CMOS circuits. As transistor scaling is slowing, interconnect scaling has become the main driver for circuit miniaturization, and interconnect lim... » read more

Sidestepping Lithography In Chip Manufacturing
By Katherine Derbyshire - 23 May, 2024 - Comments: 0

Rising lithography costs, shrinking feature sizes, and the need for an alternative to copper are collectively spurring new interest in area-selective deposition. An extension of atomic layer deposition, ASD seeks to build circuit features from the bottom up, without relying on lithography. Lithography will remain a critical tool for the foreseeable future. But it has long been the most expen... » read more

Backside Power Delivery Gears Up For 2nm Devices
By Laura Peters - 26 Feb, 2024 - Comments: 1

The top three foundries plan to implement backside power delivery as soon as the 2nm node, setting the stage for faster and more efficient switching in chips, reduced routing congestion, and lower noise across multiple metal layers. The benefits of using this approach are significant. By delivering power using slightly fatter, less resistive lines on the backside, rather than inefficient fro... » read more

Analysis Of BEOL Metal Schemes By Process Modeling
By Daebin Yim - 16 Nov, 2023 - Comments: 0

The semiconductor industry has been diligently searching for alternative metal line materials to replace the conventional copper dual damascene scheme, because as interconnect dimensions shrink, the barrier accounts for an increasing fraction of the total line volume. The barrier layer's dimensions cannot be scaled down as quickly as the metal line width (figure 1). Popular barrier materials su... » read more

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