EUV Pellicles Finally Ready


After a period of delays, EUV pellicles are emerging and becoming a requirement in high-volume production of critical chips. At the same time, the pellicle landscape for extreme ultraviolet (EUV) lithography is changing. ASML, the sole supplier of EUV pellicles, is transferring the assembly and distribution of these products to Mitsui. Others are also developing pellicles for EUV, a next-gen... » read more

Breaking The 2nm Barrier


Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

Big Changes In Tiny Interconnects


One of the fundamental components of a semiconductor, the interconnect, is undergoing radical changes as chips scale below 7nm. Some of the most pronounced shifts are occurring at the lowest metal layers. As more and smaller transistors are packed onto a die, and as more data is processed and moved both on and off a chip or across a package, the materials used to make those interconnects, th... » read more

Finding Defects In EUV Masks


Extreme ultraviolet (EUV) lithography is finally in production at advanced nodes, but there are still several challenges with the technology, such as EUV mask defects. Defects are unwanted deviations in chips, which can impact yield and performance. They can crop up during the chip manufacturing process, including the production of a mask or photomask, sometimes called a reticle. Fortunately... » read more

Multi-Patterning EUV Vs. High-NA EUV


Foundries are finally in production with EUV lithography at 7nm, but chip customers must now decide whether to implement their next designs using EUV-based multiple patterning at 5nm/3nm or wait for a new single-patterning EUV system at 3nm and beyond. This scenario revolves around ASML’s current extreme ultraviolet (EUV) lithography tool (NXE:3400C) versus a completely new EUV system with... » read more

Dealing With Resistance In Chips


Chipmakers continue to scale the transistor at advanced nodes, but they are struggling to maintain the same pace with the other two critical parts of the device—the contacts and interconnects. That’s beginning to change, however. In fact, at 10nm/7nm, chipmakers are introducing new topologies and materials such as cobalt, which promises to boost the performance and reduce unwanted resist... » read more

Big Trouble At 3nm


As chipmakers begin to ramp up 10nm/7nm technologies in the market, vendors are also gearing up for the development of a next-generation transistor type at 3nm. Some have announced specific plans at 3nm, but the transition to this node is expected to be a long and bumpy one, filled with a slew of technical and cost challenges. For example, the design cost for a 3nm chip could exceed an eye-p... » read more

New Nodes, Materials, Memories


Ellie Yieh, vice president and general manager of Advanced Product Technology Development at [getentity id="22817" e_name="Applied Materials"], and head of the company's Maydan Technology Center, sat down with Semiconductor Engineering to talk about challenges, changes and solutions at advanced nodes and with new applications. What follows are excerpts of that conversation. SE: How far can w... » read more

All About Interconnects


It's well known that advanced chips contain billions of transistors – this is an incredible, mind-blowing fact to be sure – but did you know that large-scale integrated chips (about the size of a fingernail) can contain ~30 miles of interconnect “wires” in stacked levels? These wires function like highways or pipelines to transport electrons, connect transistors and other components to ... » read more

Ruthenium Liners Give Way To Ruthenium Lines


For several years now, integrated circuit manufacturers have been investigating alternative barrier layer materials for copper interconnects. As interconnect dimensions shrink, the barrier accounts for an increasing fraction of the total line volume. As previously reported, both cobalt and ruthenium have drawn substantial interest because they can serve as both barrier and seed layers, minimizi... » read more

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