tag: SiC

More Manufacturing Issues, More Testing
By Ed Sperling - 08 Feb, 2022 - Comments: 0

Douglas Lefever, CEO of Advantest America, sat down with Semiconductor Engineering to talk about changes in test, the impact of advanced packaging, and business changes that are happening across the flow. What follows are excerpts of that discussion. SE: What are the big changes ahead in test? Lefever: It's less about inflection points and more like moving from algebra to calculus in the ... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
By Technical Paper Link - 04 Feb, 2022 - Comments: 0

Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

200mm Shortages May Persist For Years
By Mark LaPedus - 20 Jan, 2022 - Comments: 2

A surge in demand for chips at more mature process nodes is causing shortages for both 200mm foundry capacity and 200mm equipment, and it shows no signs of letting up. In fact, even with new capacity coming on line this year, shortages are likely to persist for years, driving up prices and forcing significant changes across the semiconductor supply chain. Shortages for both 200mm foundry cap... » read more

Inspecting And Testing GaN Power Semis
By Patrick Waurzyniak - 11 Jan, 2022 - Comments: 1

As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap power semiconductors offer automakers a range of new EV solutions, but questions remain on how to meet the stringent quality goals of the automotive industry. Among t... » read more

Revving Up SiC And GaN
By Ann Mutschler - 13 Dec, 2021 - Comments: 0

Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the demand for better tools to design, verify, and test these wide-bandgap devices. Both SiC and GaN are proving essential in areas such as battery management in electric vehicles. They can handle much ... » read more

China Accelerates Foundry, Power Semi Efforts
By Mark LaPedus - 22 Nov, 2021 - Comments: 4

China has unveiled several initiatives to advance its domestic semiconductor industry, including a new and massive fab expansion campaign in the foundry, gallium-nitride (GaN), and silicon carbide (SiC) markets. The nation is making a big push into what it calls “third-generation semiconductors,” which is a misnomer. The term actually refers to two existing and common power semiconductor... » read more

Choosing A Gate Driver For Silicon Carbide MOSFETs
By Olaf Bendix - 14 Oct, 2021 - Comments: 0

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it? The answer to this question is: identify a suitable gate driver IC based on the peak current and power dissipation requirements of your application and a fitting gate resistor for your SiC... » read more

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities
By Technical Paper Link - 12 Oct, 2021 - Comments: 0

Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

Inspecting, Testing, And Measuring SiC
By Patrick Waurzyniak - 12 Oct, 2021 - Comments: 0

Achieving the auto industry's stringent zero defect goals is becoming a big challenge for makers of silicon carbide substrates, which are struggling to achieve sufficient yields and reliability as they migrate from 150mm to 200mm wafers and shift their focus away from pure silicon. SiC is a combination of silicon and harder carbide materials, and it has emerged as a key technology for batter... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 08 Oct, 2021 - Comments: 0

Government policy Hoping to resolve the ongoing worldwide chip shortage situation, the U.S. Department of Commerce late last month launched a “request for information (RFI)” initiative, which involved sending questionnaires to various semiconductor companies. The U.S. government is asking all parts of the supply chain – producers, consumers, and intermediaries – to voluntarily share in... » read more

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