tag: silicon carbide

High Voltage Testing Races Ahead
By Karen Heyman - 06 Dec, 2022 - Comments: 1

Voltage requirements are increasing, especially for the EV market. Even devices that might be considered relatively low voltage, such as display drivers, are now pushing past established baselines. While working with high voltages is nothing new — many engineers can recall yellow caution tape in their workplaces — the sheer number and variety of new requirements have made testing at high... » read more

Week In Review: Semiconductor Manufacturing, Test
By Karen Heyman - 21 Oct, 2022 - Comments: 0

Fallout from the new U.S. export controls continues. Under new regulations, companies looking to supply Chinese chipmakers with advanced manufacturing equipment (<14nm) must first obtain a license from the U.S. Department of Commerce. In addition, U.S. persons (citizens and permanent residents) are barred from supporting China’s advanced chip development or production without a license. ... » read more

How Quickly Can SiC Ramp?
By Adele Hars - 21 Jul, 2022 - Comments: 0

Device makers across the globe are ramping silicon carbide (SiC) manufacturing, with growth set to really take off starting in 2024. It’s been almost five years since Tesla and STMicroelectronics threw down the gauntlet with SiC in the Model 3. Now, no one doubts the market pull for electric vehicles, but consumers are still clamoring for better range and faster charging. SiC devices are a... » read more

ORNL: Advantages of Using Wide Bandgap Semiconductor Materials For Extreme Temp & Radiation
By Technical Paper Link - 13 Jun, 2022 - Comments: 0

Research paper from ORNL (Oak Ridge National Lab) titled "Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments." Abstract "With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors hav... » read more

Research Bits: June 8
By Jesse Allen - 08 Jun, 2022 - Comments: 0

Five-second coherence for silicon carbide qubits Researchers from the University of Chicago, National Institutes for Quantum Science and Technology, and Linköping University built a qubit from silicon carbide and was able to retain its coherence, or the length of time the quantum state persists, for over five seconds. “It’s uncommon to have quantum information preserved on these human ... » read more

Wafer Shortage Improvement In Sight For 300mm, But Not 200mm
By Adele Hars - 19 May, 2022 - Comments: 2

The supply chain for bare wafers is off-kilter. Demand is appreciably higher than the wafer suppliers can keep up with, creating shortages that could last for years. For 300mm starting wafers, the top five big players — SEH and Sumco of Japan, Siltronic of Germany, GlobalWafers of Taiwan, and SK Siltron of Korea — finally took action over the last year, spending billions on new wafer fac... » read more

Driving Toward More Rugged, Less Expensive SiC
By Katherine Derbyshire - 19 May, 2022 - Comments: 0

Silicon carbide is gaining traction in the power semiconductor market, particularly in electrified vehicles, but it's still too expensive for many applications. The reasons are well understood, but until recently SiC was largely a niche technology that didn't warrant the investment. Now, as demand grows for chips that can work in high-voltage applications, SiC is getting a much closer look. ... » read more

Compound Semiconductor Innovation Advances EVs And Other Green Technologies
By Rupa Velidandla - 11 May, 2022 - Comments: 0

As the world works to reduce greenhouse gas emissions, global adoption of electric vehicles (EVs) is driving an increased demand for high-power, energy-efficient compound semiconductors, such as silicon carbide (SiC)-based components, throughout the entire EV assembly process. Renewable energy technology is now at the forefront of climate-forward research, with accelerating EV sales playing�... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
By Technical Paper Link - 04 Feb, 2022 - Comments: 0

Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

Inspecting And Testing GaN Power Semis
By Patrick Waurzyniak - 11 Jan, 2022 - Comments: 1

As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap power semiconductors offer automakers a range of new EV solutions, but questions remain on how to meet the stringent quality goals of the automotive industry. Among t... » read more

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