tag: silicon carbide

Problems In The Power Grid
By Ed Sperling - 22 Jun, 2021 - Comments: 1

The gap is widening between power availability and peak demand. Ritesh Tyagi, head of innovation and growth strategy at Infineon Technologies, talks about what needs to be done to fix the power grid, particularly as more cars are electrified and more electronic devices are mobile. While there currently is a surplus in power being generated on a macro level in the United States, for example, it�... » read more

SiC And Industrial Servos: A Perfect Match
By Michael Ebli - 10 Jun, 2021 - Comments: 0

The automation engineers of the 1960s would look with envy at the servo technology in use today. Small, precise, and, above all, electric, they are a reflection of the compactness of the semiconductor control, sensor, and power technology we have available today. Today’s biggest challenge remains the cabling between the servo and its controller. Notoriously expensive, due to having to withsta... » read more

Power, Performance — Avionics Designers Want It All
By Heidi Elliott - 10 Jun, 2021 - Comments: 0

Not long ago, the prevailing philosophy among chip designers for aviation systems could be summed up as, “I feel the need — the need for speed.” Today, aviation’s top guns have pulled back on the throttle a bit. There’s a more nuanced discussion balancing the need for performance versus power, with other factors coming into consideration such as safety, security certifications and ove... » read more

Manufacturing Bits: June 7
By Mark LaPedus - 07 Jun, 2021 - Comments: 0

High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

Automotive IC Shortage Drags On
By Patrick Waurzyniak - 20 May, 2021 - Comments: 1

The current automotive semiconductor shortages won’t end anytime soon. When the COVID-19 pandemic hit in early 2020, it wreaked havoc on the worldwide supply chain, but it especially caught automakers flat-footed. When the auto OEMs canceled chip orders during a roughly eight-week period of plant shutdowns, they later found their supplies of critical ICs had evaporated. To make it an ev... » read more

Going Vertical With GaN Devices
By Katherine Derbyshire - 15 Apr, 2021 - Comments: 1

Gallium nitride has long been on the horizon for a variety of uses in semiconductors, but implementing this on a commercial scale has been relatively slow due to a variety of technical hurdles. That may be about to change. The wide bandgap of GaN makes it particularly attractive material for power conversion applications. Still, actually realizing its benefits in commercial devices has been ... » read more

SiC MOSFETs In The Landscape Of Modern Power Devices
By Peter Friedrichs - 08 Apr, 2021 - Comments: 0

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated Gate Bipolar Transistors) have been the prevailing component of choice before. But which role do SiC MOSFETs play in today’s landscape of power devices? With SiC MOSFETs (Metal-Oxide-Semicond... » read more

IC Materials For Extreme Conditions
By Katherine Derbyshire - 18 Mar, 2021 - Comments: 1

The number of materials being researched for chips used in extreme environments, such as landing on the planet Venus, is growing. While GaN has captured much of the attention for power conversion circuits, it's just one of several applications for semiconductors in extreme environments. The high voltage, high temperature, and caustic atmospheres found in many industrial and aerospace environ... » read more

Controlling The Reliability Of Silicon Carbide-Based Devices
By Peter Friedrichs - 11 Mar, 2021 - Comments: 0

The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher frequencies, and with higher breakdown voltage characteristics, SiC power transistors are quickly becoming an attractive silicon alternative for high power density and/or high-efficiency power conver... » read more

Increasing The Conductive Density Of Packaging
By Shaun Bowers - 18 Feb, 2021 - Comments: 0

Wide bandgap (WBG) semiconductor technologies have created new challenges and opportunities for power packages. Developments such as silicon carbide (SiC) and gallium nitride (GaN), have a higher figure of merit (FOM) compared to silicon MOSFETs and have extended the efficiency, output power and/or switching frequency range and operating temperature range for power electronics. With lower lo... » read more

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