tag: silicon carbide

Compound Semiconductor Innovation Advances EVs And Other Green Technologies
By Rupa Velidandla - 11 May, 2022 - Comments: 0

As the world works to reduce greenhouse gas emissions, global adoption of electric vehicles (EVs) is driving an increased demand for high-power, energy-efficient compound semiconductors, such as silicon carbide (SiC)-based components, throughout the entire EV assembly process. Renewable energy technology is now at the forefront of climate-forward research, with accelerating EV sales playing�... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
By Technical Paper Link - 04 Feb, 2022 - Comments: 0

Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

Inspecting And Testing GaN Power Semis
By Patrick Waurzyniak - 11 Jan, 2022 - Comments: 1

As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap power semiconductors offer automakers a range of new EV solutions, but questions remain on how to meet the stringent quality goals of the automotive industry. Among t... » read more

Revving Up SiC And GaN
By Ann Mutschler - 13 Dec, 2021 - Comments: 0

Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the demand for better tools to design, verify, and test these wide-bandgap devices. Both SiC and GaN are proving essential in areas such as battery management in electric vehicles. They can handle much ... » read more

Choosing A Gate Driver For Silicon Carbide MOSFETs
By Olaf Bendix - 14 Oct, 2021 - Comments: 0

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it? The answer to this question is: identify a suitable gate driver IC based on the peak current and power dissipation requirements of your application and a fitting gate resistor for your SiC... » read more

Inspecting, Testing, And Measuring SiC
By Patrick Waurzyniak - 12 Oct, 2021 - Comments: 0

Achieving the auto industry's stringent zero defect goals is becoming a big challenge for makers of silicon carbide substrates, which are struggling to achieve sufficient yields and reliability as they migrate from 150mm to 200mm wafers and shift their focus away from pure silicon. SiC is a combination of silicon and harder carbide materials, and it has emerged as a key technology for batter... » read more

The Silicon Carbide Race Begins
By Patrick Waurzyniak - 20 Sep, 2021 - Comments: 0

The growing adoption of silicon carbide (SiC) for a variety of automotive chips has reached the tipping point where most chipmakers now consider it a relatively safe bet, setting off a scramble to stake a claim and push this wide-bandgap technology into the mainstream. SiC holds great promise for a number of automotive applications, particularly for battery electric vehicles. It can extend d... » read more

Gearing Up For Next-Gen Power Semis
By Mark LaPedus - 16 Sep, 2021 - Comments: 0

After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Short-Circuit Ruggedness In SiC MOSFETs
By Zhihui Yuan - 13 Sep, 2021 - Comments: 1

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching devices. As a result, outstanding system performance is achieved, enabling higher efficiency, power density, and reduced system cost for many applications. Today, for major target applications for S... » read more

Next-Level Power Density In Solar And Energy Storage With Silicon Carbide MOSFETs
By Infineon - 01 Sep, 2021 - Comments: 0

Latest generation silicon carbide semiconductors enable a significant increase in power conversion efficiency in solar power generation systems and associated energy storage. This white paper describes the applications and outlines how lower loss not only saves energy, but also results in smaller and lighter equipment with lower capital, installation and maintenance costs. Click here to read... » read more

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