tag: transition-metal dichalcogenides

Power/Performance Bits: May 24
By Jesse Allen - 24 May, 2016 - Comments: 0

Reducing MRAM chip area Researchers from Tohoku University developed a technology to stack magnetic tunnel junctions (MTJ) directly on the via without causing deterioration to its electric/magnetic characteristics. The team focused on reducing the memory cell area of spin-transfer torque magnetic random access memory (STT-MRAM) in order to lower manufacturing costs, making them more compe... » read more

Manufacturing Bits: Feb. 16
By Mark LaPedus - 16 Feb, 2016 - Comments: 0

Monoxide chips Two-dimensional (2D) materials are gaining steam in the R&D labs. The 2D materials could enable a new class of field-effect transistors (FETs), but the technology isn’t expected to appear until sometime in the next decade. The 2D materials include graphene, boron nitride and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is gaining inter... » read more

One-On-One: Aaron Thean
By Mark LaPedus - 22 Jan, 2015 - Comments: 0

Semiconductor Engineering sat down to discuss process technology, transistor trends and other topics with Aaron Thean, vice president of process technologies and director of the logic devices R&D program at Imec. SE: Chipmakers are ramping up the 16nm/14nm logic node, with 10nm and 7nm in R&D. What’s the current timeline for 10nm and 7nm? Thean: 10nm is on its way. We will see r... » read more

Atomic Layer Etch Finally Emerges
By Mark LaPedus - 15 May, 2014 - Comments: 1

The migration towards finFETs and other devices at the 20nm node and beyond will require a new array of chip-manufacturing technologies. Multiple patterning, hybrid metrology and newfangled interconnect schemes are just a few of the technologies required for future scaling. In addition, the industry also will require new techniques that can process structures at the atomic level. For example... » read more

System Bits: May 6
By Ann Mutschler - 06 May, 2014 - Comments: 0

Nonlinear optical resonance The drive to develop ultrasmall and ultrafast electronic devices using a single atomic layer of semiconductors, such as transition metal dichalcogenides, has received a significant boost. Researchers with Berkeley Lab have recorded the first observations of a strong nonlinear optical resonance along the edges of a single layer of molybdenum disulfide. The existence ... » read more

Manufacturing Bits: Jan. 14
By Mark LaPedus - 14 Jan, 2014 - Comments: 0

MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more

Manufacturing Bits: Jan. 7
By Mark LaPedus - 07 Jan, 2014 - Comments: 0

Climbing Terminator Robots Simon Fraser University has developed a family of climbing robots that mimic the stickiness of gecko lizard feet. Based on a “footpad terminator” adhesive technology, the robots could be used in space missions and on Earth. The climbing robot, called Abigaille, features six legs. This allows the robots to crawl on vertical and horizontal structures. The techno... » read more

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