Ferroelectric Memories Answer Call For Non-Volatile Alternatives


As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and the stability of flash memory. Changing the polarization of ferroelectric domains is extremely fast, and the polarization remains stable without power for years, if not decades. FeFETs, one of ... » read more

3D In-Memory Compute Making Progress


Indium compounds are showing great promise for 3D in-memory compute and RF integration, but more work is needed. Researchers continue to make headway into 3D device integration particularly with indium tin oxide (ITO), which is widely used in display manufacturing. Recent work indicates that different compounds of indium oxide doped with tin, gallium, or zinc combinations may boost transisto... » read more

Research Bits: August 1


Thinner, tougher heat flux sensors Researchers from the Department of Physics at the University of Tokyo have designed a heat flux sensor that can measure heat flux — the amount of heat that passes through a material — using a manufacturable, flexible thin film with circuits etched in a way that increases the anomalous Nernst effect (ANE). ANE turns heat into an electrical signal using ... » read more

Research Bits: July 18


Miniaturized ferroelectric FETs Researchers from the University of Pennsylvania, Hanyang University, King Abdulaziz University, King Abdullah University of Science and Technology, and University of Tokyo proposed a new ferroelectric FET (FE-FET) design with improved performance for both computing and memory. The transistor layers the two-dimensional semiconductor molybdenum disulfide (MoS2)... » read more

Research Bits: June 13


Converting heat to electricity Researchers at the National Institute of Standards and Technology (NIST) and University of Colorado Boulder fabricated a device to boost the conversion of heat into electricity. The technique involves depositing hundreds of thousands of microscopic columns of gallium nitride atop a silicon wafer. Layers of silicon are then removed from the underside of the waf... » read more

Week In Review: Design, Low Power


Cadence bought Pulsic, a U.K.-based developer of place-and-route tools for custom digital and analog. The acquisition follows a previous acquisition attempt by a Chinese firm in August 2022, which was blocked by the U.K. government. At the G7 Summit in Japan, IBM announced a 10-year, $100 million initiative with the University of Tokyo and the University of Chicago to develop a quantum-centr... » read more

Week In Review: Design, Low Power


Design Ansys has signed a definitive agreement to acquire EDA tool company Diakopto. Diakopto specializes in software tools that find the cause of layout parasitics. Its products are ParagonX, for analyzing and debugging IC designs and layout parasitics, and EM/IR analysis/verification tool PrimeX. The deal is expected to close in the second quarter of 2023. SEMI’s FlexTech community issu... » read more

Chip Industry’s Technical Paper Roundup: May 2


New technical papers recently added to Semiconductor Engineering’s library: [table id=95 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us p... » read more

Hardware-Accelerated RTL Simulator


A technical paper titled "Manticore: Hardware-Accelerated RTL Simulation with Static Bulk-Synchronous Parallelism" was published by researchers at EPFL, University of Tokyo, Sharif University, and Indian Institute of Technology. Abstract "The demise of Moore's Law and Dennard Scaling has revived interest in specialized computer architectures and accelerators. Verification and testing of thi... » read more

Research Bits: Feb. 28


Single-molecule switch An international team of researchers have demonstrated a switch on a single fullerene molecule. Using a laser, the team switched the path of an incoming electron. “What we’ve managed to do here is control the way a molecule directs the path of an incoming electron using a very short pulse of red laser light,” said Project Researcher Hirofumi Yanagisawa from the Uni... » read more

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