A new technical paper titled “Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration” was published by researchers at Yokohama National University, TEL, SK hynix, and University of Tsukuba.
According to the paper:
“Although much research has been conducted on wafer bonding methods compatible with the latest semiconductor manufacturing processes, discussions on the interface mechanisms during low temperature annealing have been insufficient. In this study, plasma-activated bonding was carried out using SiCN, which is a major bonding dielectric material. The bonding strength and water remaining at the interface were subsequently evaluated.”
Find the paper here. June 2025.
Hayato Kitagawa, Ryosuke Sato, Sodai Ebiko, Atsushi Nagata, Chiwoo Ahn, Yeounsoo Kim, Jiho Kang, Akira Uedono, and Fumihiro Inoue
ACS Omega Article ASAP
DOI: 10.1021/acsomega.5c03628
Leave a Reply