What’s Changing In DRAM


More data requires more processing and more storage, because that data needs to be stored somewhere. What’s changing is that it’s no longer just about SRAM and DRAM. Today, multiple types of DRAM are used in the same devices, each with its own set of tradeoffs. C.S. Lin, marketing executive at Winbond, talks about the potential problems that causes, including mismatches in latency, and high... » read more

Many More Hurdles In Heterogeneous Integration


Advanced packaging options continue to stack up in the pursuit of “More than Moore” and higher levels of integration. It has become a place where many high-density interconnects converge, and where many new and familiar problems need to be addressed. The industry’s first foray into fine-pitch multi-die packaging utilized silicon interposers with through-silicon vias (TSVs) to deliver s... » read more

Making Heterogeneous Integration More Predictable


Experts at the Table: Semiconductor Engineering sat down to discuss problems and potential solutions in heterogeneous integration with Dick Otte, president and CEO of Promex Industries; Mike Kelly, vice president of chiplets/FCBGA integration at Amkor Technology; Shekhar Kapoor, senior director of product management at Synopsys; John Park, product management group director in Cadence's Custom I... » read more

Gearing Up For Hybrid Bonding


Hybrid bonding is becoming the preferred approach to making heterogeneous integration work, as the semiconductor industry shifts its focus from 2D scaling to 3D scaling. By stacking chiplets vertically in direct wafer-to-wafer bonds, chipmakers can leapfrog attainable interconnection pitch from 35µm in copper micro-bumps to 10µm or less. That reduces signal delay to negligible levels and e... » read more

Negative-Tone Photosensitive Polymeric Bonding Material To Enable Room Temperature Prebond For Cu/Polymer Hybrid Bonding


An evaluation of a negative-tone i-line photosensitive polymeric bonding material for achieving prebonding in Cu/polymer hybrid bonding at low temperatures via the Cu damascene process. The polymeric material has a Tg≤100∘C ; Young’s modulus of 99 MPa, the dielectric constant of 2.6, and dissipation factor of 0.0016 at 10 GHz. Shear tests revealed a bond shear strength of over 10 MPa when... » read more

Streamlining Failure Analysis Of Chips


Experts at the Table: Semiconductor Engineering sat down to discuss how increasing complexity in semiconductor and packaging technology is driving shifts in failure analysis methods, with Frank Chen, director of applications and product management at Bruker Nano Surfaces & Metrology; Mike McIntyre, director of product management in the Enterprise Business Unit at Onto Innovation; Kamran Hak... » read more

Smarter Systems Through Heterogeneous Integration: Highlights From 3D & Systems Summit


It has taken decades of research and development and strong commitment to various industry programs, but the stars are finally aligning for 3D semiconductor systems. No one could have left the 3D & Systems Summit 2023 – held in late June in Dresden – with any doubt that heterogeneous integration, enabled by increasingly mature 3D packaging technologies, is becoming a key driver of the s... » read more

3DICs: Legalizer Techniques For Better Routing Quality, Fewer DRVs, And Reduced Total Slack With Negligible Runtime Impact


A technical paper titled “On Legalization of Die Bonding Bumps and Pads for 3D ICs” was published by researchers at the Georgia Institute of Technology, NVIDIA Corporation, and the University of Bremen. Abstract "State-of-the-art 3D IC Place-and-Route flows were designed with older technology nodes and aggressive bonding pitch assumptions. As a result, these flows fail to honor the widt... » read more

Big Changes Ahead In Power Delivery, Materials, And Interconnects


Part one of this forecast looked at evolving transistor architectures and lithography platforms. This report examines revolutions in interconnects and packaging. When it comes to device interconnects, it’s hard to beat copper. Its low resistivity and high reliability have served the industry exceedingly well as both on-chip interconnect and wires between chips. But in logic chips, with int... » read more

Advanced Packaging for High-Bandwidth Memory: Influences of TSV size, TSV Aspect Ratio And Annealing Temperature


A technical paper titled "Stress Issue of Vertical Connections in 3D Integration for High-Bandwidth Memory Applications" was published by researchers at National Yang Ming Chiao Tung University. Abstract: "The stress of TSV with different dimensions under annealing condition has been investigated. Since the application of TSV and bonding technology has demonstrated a promising approach for ... » read more

← Older posts