Wafer Bonding Mechanisms Using SiCN Films For Hybrid Bonding Applications In 3D Integration 


A new technical paper titled "Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration" was published by researchers at Yokohama National University, TEL, SK hynix, and University of Tsukuba. According to the paper: "Although much research has been conducted on wafer bonding methods compatible with the latest semiconductor manufacturing processes, discussions on the interface... » read more

Capping Tools Tame Electromigration


By Mark LaPedus The shift towards the 28nm node and beyond has put the spotlight back on the interconnect in semiconductor manufacturing. In chip scaling, the big problem in the interconnect is resistance-capacitance (RC). Another, and sometimes forgotten, issue is electromigration. “Electromigration gets worse in device scaling,” said Daniel Edelstein, an IBM Fellow and manager of BE... » read more