Comparison Of The Meta Modeling Approach With HGLs


A new technical paper titled "The Argument for Meta-Modeling-Based Approaches to Hardware Generation Languages" was published by researchers at Infineon Technologies and TU Munich. Abstract "The rapid evolution of Integrated Circuit (IC) development necessitates innovative methodologies such as code generation to manage complexity and increase productivity. Using the right methodology for g... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors


A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

3-Channel Package-Scale Galvanic Isolation Interface for SiC and GaN Power Switching Converters


A new technical paper titled "A Three-Channel Package-Scale Galvanic Isolation Interface for Wide Bandgap Gate Drivers" was published by STMicroelectronics and DIEEI, Università di Catania. Abstract "This article presents the design of a three-channel package-scale galvanic isolation interface for SiC and GaN power switching converters. The isolation interface consists of two side-by-sid... » read more

2D van der Waals Magnets Above Room Temperature (MIT)


A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

Low-Overhead Fault-Tolerant Quantum Memory (IBM)


A new technical paper titled "High-threshold and low-overhead fault-tolerant quantum memory" was published by researchers at IBM Quantum. Abstract "The accumulation of physical errors prevents the execution of large-scale algorithms in current quantum computers. Quantum error correction promises a solution by encoding k logical qubits onto a larger number n of physical qubits, such t... » read more

Scalable Verification of Memory Consistency (Purdue University)


A new technical paper titled "QED: Scalable Verification of Hardware Memory Consistency" was published by researchers at Purdue University. Abstract "Memory consistency model (MCM) issues in out-of-order-issue microprocessor-based shared-memory systems are notoriously non-intuitive and a source of hardware design bugs. Prior hardware verification work is limited to in-order-issue processors... » read more

Rowhammer Exploitation On AMD Platforms, DDR4 DDR5 (ETH Zurich)


A new technical paper titled "ZenHammer: Rowhammer Attacks on AMD Zen-based Platforms" was published by researchers at ETH Zurich. The work will be presented at USENIX Security Symposium in August 2024. Abstract: "AMD has gained a significant market share in recent years with the introduction of the Zen microarchitecture. While there are many recent Rowhammer attacks launched from Intel CPU... » read more

Power Sub-Mesh Construction To Mitigate IR Drop And Minimize Routing Overhead (Intel)


A new technical paper titled "Power Sub-Mesh Construction in Multiple Power Domain Design with IR Drop and Routability Optimization" was published by researchers at Intel Corporation and National Taiwan University. Abstract: "Multiple power domain design is prevalent for achieving aggressive power savings. In such design, power delivery to cross-domain cells poses a tough challenge at adv... » read more

Hybrid All-Optical Switching Devices Combining Silicon Nanocavities And 2D Semiconductor Material


A new technical paper titled "Hybrid silicon all-optical switching devices integrated with two-dimensional material" was published by researchers at RIKEN, National Institute of Advanced Industrial Science and Technology (AIST), and Keio University. Abstract "We propose and demonstrate hybrid all-optical switching devices that combine silicon nanocavities and two-dimensional semiconduct... » read more

High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond


A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

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