Executive Insight: Charlie Cheng


[getperson id="11073" comment="Charlie Cheng"], CEO of [getentity id="22135" e_name="Kilopass Technology"], sat down with Semiconductor Engineering to talk about the limitations of DRAM, how to get around them, and who's likely to do that. What follows are excerpts of that discussion. SE: What are the top market segments from a [getkc id="22" kc_name="memory"] standpoint? Cheng: The top o... » read more

Sorting Out Next-Gen Memory


In the data center and related environments, high-end systems are struggling to keep pace with the growing demands in data processing. There are several bottlenecks in these systems, but one segment that continues to receive an inordinate amount of attention, if not part of the blame, is the memory and storage hierarchy. [getkc id="92" kc_name="SRAM"], the first tier of this hierarchy, is... » read more

Memory Hierarchy Shakeup


It’s no secret that today’s memory chips and storage devices are struggling to keep up with the growing demands in data processing. To solve the problem, chipmakers have been working on several next-generation memory types. But most technologies have been delayed or fallen short of their promises. But after numerous delays, a new wave of next-generation, nonvolatile memories are finally ... » read more

Executive Insight: Charlie Cheng


Charlie Cheng, CEO of Kilopass, sat down with Semiconductor Engineering to talk about issues with current memory types and why the market is ready for disruptive approaches to reduce power and cost. SE: What's changing in the memory space? Cheng: Memory is a very important building block. It's a foundation and a commodity for a chip and for the system, but if you look at the big picture, ... » read more

Drill Down: Embedded NVM Technology


Many of the next-generation devices that will be seen on the IoT/E will have power, footprint, and electronic constraints as never before. Electronic flash memories (eFLASH), and their derivatives are seen as a realistic solution to many of these design constraints for small form factor and simple IoE devices. “NVM will be very important for the IoE from the perspective of saving power," ... » read more

IoT Will Force New Memory Paradigm


There are two things in life that have always been true: One is that you can never be too rich, and second—at least since the dawn of the technological age—you can never have too much memory. But the memory truism is changing with the onset of the [getkc id="76" comment="Internet of Things"]. The next generation of memory for the IoT must meet a different set of metrics – smaller, smar... » read more

Changes In NAND Flash Market


Things are changing quickly in the NAND flash market. Newcomers are challenging long-time market leaders and shifting the lineup in this market. A survey of NAND flash vendors, conducted by DRAMeXchange, a Singapore market research firm, shows that in Q1 of this year Samsung was firmly in first place with $2.175 billion in revenues, followed by Toshiba with $1.548 billion and SanDisk with $1... » read more

Following The Yen


An examination of the installed fab capacity base in Japan shows that total capacity expansion has stalled in recent years due to the consolidation and closures of facilities. The closure and consolidation of 27 facilities between 2009 and 2012 reduced the installed fab capacity in Japan by at least 350,000 200mm equivalent wafers per month. With that said, investments continued in some industr... » read more

What Is Going On With Sub-20nm Flash?


By Gill Lee This week I’ll be participating in a panel discussion at the Flash Memory Summit in Santa Clara, CA. The panel’s topic, Flash Below 20nm: What is Coming and When?, couldn’t be more timely. Particularly in light of a leading NAND manufacturer’s recent announcement that they will begin mass production of the semiconductor industry’s first 3D vertical NAND flash memory later... » read more

How To Reduce The Need For Guardbanding A Flash ADC Design


For sensitive mixed-signal designs at small process nodes, the influence of parasitic elements is growing with the increasing interactions among devices and interconnects that are in close proximity. Circuits are highly sensitive to these parasitic effects, and accurate parasitic extraction is critical for first silicon success. New 3D parasitic extraction technology applied to a flash ADC circ... » read more

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