Improving Semiconductor Yield Using Large Area Analysis

By Jacky Huang - 19 Dec, 2023 - Comments: 0

Design rule checking (DRC) is a technique used during chip design to ensure that a device can successfully be manufactured at high yield. Design rules are established based on the limits and variability of equipment and process technologies in use. DRC checking ensures that a design meets manufacturing requirements and will not result in a chip failure or DRC “violation.” Common DRC rules i... » read more

Analysis Of BEOL Metal Schemes By Process Modeling

By Daebin Yim - 16 Nov, 2023 - Comments: 0

The semiconductor industry has been diligently searching for alternative metal line materials to replace the conventional copper dual damascene scheme, because as interconnect dimensions shrink, the barrier accounts for an increasing fraction of the total line volume. The barrier layer's dimensions cannot be scaled down as quickly as the metal line width (figure 1). Popular barrier materials su... » read more

The Impact Of Channel Hole Profiles On Advanced 3D NAND Structures

By Qingpeng Wang - 19 Oct, 2023 - Comments: 0

In a two-tier 3D NAND structure, the upper and lower channel hole profile can be different, and this combination of different profiles leads to different top-down visible areas. The visible area is the key metric to determine whether the bottom SONO layer can be punched through and ensure that the bit cells connect to the common source line. Performing channel hole profile splits on a silicon w... » read more

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration

By Sumant Sarkar - 25 Jul, 2023 - Comments: 0

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar transistor architectures toward 3D devices. Gate-all-around (GAA) architectures are an example of this type of 3D device [2]. In a GAA transistor, the gate oxide surrounds the channel in all directions.... » read more

Improving DRAM Device Performance Through Saddle Fin Process Optimization

By Taeyon (TY) Oh - 15 Jun, 2023 - Comments: 0

As DRAM technology nodes have scaled down, access transistor issues have been highlighted due to weak gate controllability. Saddle Fins with Buried Channel Array Transistors (BCAT) have subsequently been introduced to increase channel length, prevent short channel effects, and increase data retention times [1]. However, at technology nodes beyond 20nm, securing sufficient device performance (su... » read more

The Impact Of Metal Gate Recess Profile On Transistor Resistance And Capacitance

By Pradeep Nanja - 18 May, 2023 - Comments: 0

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize the metal gate recess dimensions. However, there are limits to reducing this capacitance if you simply remove more of the metal material, since this can modify capacitance unexpectedly through chan... » read more

A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines

By Timothy Yang - 20 Apr, 2023 - Comments: 0

Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

A Comparative Evaluation Of DRAM Bit-Line Spacer Integration Schemes

By Dempsey Deng - 16 Mar, 2023 - Comments: 0

With decreasing dynamic random-access memory (DRAM) cell sizes, DRAM process development has become increasingly difficult. Bit-line (BL) sensing margins and refresh times have become problematic as cell sizes have decreased, due to an increase in BL parasitic capacitance (Cb). The main factor impacting Cb is the parasitic capacitance between the BL and the node contact (CBL-NC) [1]. To reduce ... » read more

The Other Side Of The Wafer: The Latest Developments In Backside Power Delivery

By Sandy Wen - 16 Feb, 2023 - Comments: 0

At the beginning of my career in semiconductor equipment, the backside of the wafer was a source of anxiety. In one memorable instance in my early career, several wafers flew off a robot blade during a wafer transfer. After cleaning up the mess, we remembered that a variety of thin films could be deposited on the wafer backside, which could decrease its friction coefficient. Slowing down the wa... » read more

Automotive MEMS Accelerometer Design Verification: A Real Life Example

By Arnaud Parent - 15 Dec, 2022 - Comments: 0

Standard Finite Element (FE) models, especially those that incorporate multiple physical domains, consist of detailed representations of a device that include a large number of Degrees of Freedom (DoF). The Degrees of Freedom in a design are the number of independent variables or parameters needed to describe the motion or state of the device. Generally, the larger the number of Degrees of Free... » read more

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Entities, people and technologies explored

Shift Left Is The Tip Of The Iceberg

A transformative change is underway for semiconductor design and EDA. New languages, models, and abstractions will need to be created.

by Brian Bailey

Partitioning In The Chiplet Era

Understanding how chiplets interact under different workloads is critical to ensuring signal integrity and optimal performance in heterogeneous designs.

by Ann Mutschler

3.5D: The Great Compromise

Pros and cons of a middle-ground chiplet assembly that combines 2.5D and 3D-IC.

by Ed Sperling

AI’s Role In Chip Design Widens, Drawing In New Startups

Focus is on letting engineers do much more with the same or fewer resources — and less drudgery.

by Karen Heyman

Key Technologies To Extend EUV To 14 Angstroms

Alongside high-NA EUV will be better-performing photoresists, reduced roughness using passivation and etch, and lateral etching to reduce tip-to-tip dimensions.

by Laura Peters

Memory Fundamentals For Engineers

eBook: Nearly everything you need to know about memory, including detailed explanations of the different types of memory; how and where these are used today; what's changing, which memories are successful and which ones might be in the future; and the limitations of each memory type.

by The SE Staff

What Comes After HBM For Chiplets

The standard for high-bandwidth memory limits design freedom at many levels, but that is required for interoperability. What freedoms can be taken from other functions to make chiplets possible?

by Brian Bailey

Why Small Fab And Assembly Houses Are Thriving

Megafabs churning out the most advanced processors are not the only game in town.

by Bryon Moyer

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