category: Manufacturing, Packaging and Materials

category: IoT, Security & Automotive

Mask Maker Worries Grow
By Mark LaPedus - 18 Aug, 2016 - Comments: 2

Leading-edge photomask makers face a multitude of challenges as they migrate from the 14nm node and beyond. Mask making is becoming more challenging and expensive at each node on at least two fronts. On one front, mask makers must continue to invest in the development of traditional optical masks at advanced nodes. On another front, several photomask vendors are preparing for the possible ra... » read more

What Transistors Will Look Like At 5nm
By Mark LaPedus - 18 Aug, 2016 - Comments: 3

Chipmakers are currently ramping up 16nm/14nm finFET processes, with 10nm and 7nm just around the corner. The industry also is working on 5nm. TSMC hopes to deliver a 5nm process by 2020. GlobalFoundries, Intel and Samsung are doing R&D for that node. But 5nm technology presents a multitude of unknowns and challenges. For one thing, the exact timing and specs of 5nm remain cloudy. The... » read more

Optical Metrology Solutions For 10nm Films Process Control Challenges
By KLA - 17 Aug, 2016 - Comments: 0

By Sridhar Mahendrakar (a), Alok Vaida (a), Kartik Venkataraman (b), Michael Lenahan (a), Steven Seipp (a), Fang Fanga (a), Shweta Saxena (a), Dawei Hu (b), Nam Hee Yoon (b), Da Song (b), Janay Camp (b), Zhou Ren (b). [a: GlobalFoundries; b:KLA-Tencor] Controlling thickness and composition of gate stack layers in logic and memory devices is critical to ensure transistor performance meets r... » read more

Bridging The Gap Between RF Front-End Module Characterization And Production Test With The Semiconductor Test System
By NI - 17 Aug, 2016 - Comments: 0

The rapid evolution of wireless connectivity has driven continual consumer thirst for more data throughput and reduced time to market. These pressures have led to modern signaling standards such as 802.11ac and LTE-Advanced, which have placed even more challenging design and test requirements on the most nonlinear and energy-demanding component in the transmitter, the RF power amplifier. The in... » read more

Back-End-of-Line (BEOL) Virtual Patterning With SEMulator3D
By Coventor - 17 Aug, 2016 - Comments: 0

Interconnect requirements for the 22nm technology node and beyond, driven by shrinking FEOL geometry, push the limits of unit process tools for BEOL as well as FEOL. Lengthy and costly in-fab experiments are required to ensure that the integrated BEOL process meets local performance and cross-wafer uniformity requirements. Virtual fabrication experiments conducted with SEMulator3D can reduce th... » read more

LVS Boxing Helps Designers Knock Out Designs Quickly
By Mentor, a Siemens Business - 17 Aug, 2016 - Comments: 0

Keeping up with the constant demand for better, faster design flow performance while preserving the original layout hierarchy of a design can be very challenging during design verification. Designers must constantly manage tradeoffs between performance, database size, and accuracy. In the early design cycle, using the LVS boxing capabilities of Calibre nmLVS to replace incomplete or missing blo... » read more

10nm Race Heats Up
By Mark LaPedus - 16 Aug, 2016 - Comments: 0

The 10nm process and foundry race is heating up, as Intel announced its 10nm technology at its annual conference. As part of the multi-pronged announcement, Intel’s foundry unit forged a major partnership with ARM. Specifically, ARM will make its physical intellectual-property (IP) available on Intel’s 10nm process. Intel, in turn, will offer the IP for foundry customers. And on to... » read more

Manufacturing Bits: Aug. 16
By Mark LaPedus - 16 Aug, 2016 - Comments: 0

Safer drinking water Two-dimensional materials are gaining steam in the R&D labs. 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). These materials could one day enable future field-effect transistors (FETs). One TMD, molybdenum disulfide (MoS2), is also generating interest in other fields. Molybdenum disulfide consists of two elements--moly... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 12 Aug, 2016 - Comments: 0

Chipmakers At this week’s Flash Memory Summit, Samsung rolled out several new products, including its next-generation 3D NAND device and a solid-state drive (SSD) with capacities up to 32 terabytes. At the same time, Samsung introduced a new and high-performance SSD solution, dubbed the Z-SSD. Samsung’s Z-SSD shares the fundamental structure of V-NAND and has a unique circuit design and... » read more

Manufacturing Bits: Aug. 9
By Mark LaPedus - 09 Aug, 2016 - Comments: 0

Faster FEBIDs Focused electron beam induced deposition (FEBID) is generating steam in the industry. Still in the R&D stage, FEBID makes use of an electron beam from a scanning electron microscope. Basically, it decomposes gaseous molecules, which, in turn, deposit materials and structures on a surface at the nanoscale. One of the big applications is a futuristic manufacturing technology... » read more

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