A new technical paper titled “First Demonstration of High-Performance and Extremely Stable W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET” was published by researchers at Georgia Institute of Technology and Micron.
Abstract
“We demonstrate a gate-all-around (GAA) nanosheet FET featuring an atomic layer-deposited (ALD) tungsten (W)-doped indium oxide (In2O3), or indium tungsten oxide (IWO), channel. A novel channel release process is developed, utilizing wet etching with an etching selectivity exceeding 103 between the channel and a metal sacrificial layer (SL), enabling lithography-independent definition of the device channel length (LCh). The fabricated nanosheet FETs, with scaled dimensions of LCh = 50 nm and WNanosheet = 30 nm, exhibit a high ON-state current (ION) of 815 μA/μm at VDS = 1 V and VG – VT = 3.5 V, along with an ultralow OFF-state current (IOFF) of 3 fA. These IWO-GAA nanosheet FETs are demonstrated to achieve exceptional threshold voltage stability under both positive (PBTI) and negative (NBTI) bias stress conditions, with the hero device achieving a record-low threshold voltage shift (ΔVT) of 88 mV for a stress voltage of VG – VT = 2.6 V, corresponding to a stress field (EStress) of 5.4 MV/cm.”
Find the technical paper here. February 2025.
E. Sarkar et al., “First Demonstration of High-Performance and Extremely Stable W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET,” in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2025.3535463.
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