Analyzing Rowhammer Vulnerability in Monolithic 3D IWO eDRAM for Edge (ASU, Georgia Tech)


Researchers from Arizona State University and Georgia Institute of Technology published “Thermal- and Aging-Aware Rowhammer Vulnerability Analysis of Monolithically-Integrated IWO eDRAM for Edge Platforms”. "This work presents the first comprehensive temperature- and aging-aware vulnerability analysis of amorphous Indium Tungsten Oxide (IWO) embedded DRAM (eDRAM), a promising next-... » read more

Demonstration Of An ALD IWO Channel In A GAA Nanosheet FET Structure (Georgia Tech, Micron)


A new technical paper titled "First Demonstration of High-Performance and Extremely Stable W-Doped In2O3  Gate-All-Around (GAA) Nanosheet FET" was published by researchers at Georgia Institute of Technology and Micron. Abstract "We demonstrate a gate-all-around (GAA) nanosheet FET featuring an atomic layer-deposited (ALD) tungsten (W)-doped indium oxide (In2O3), or indium tungsten oxide ... » read more

Indium Tungsten Oxide (IWO) Thin-Film Transistors


A new technical paper titled "Thermally Dependent Metastability of Indium-Tungsten-Oxide Thin-Film Transistors" was published by researchers at Rochester Institute of Technology and Corning Research and Development Corporation. Abstract "Indium tungsten oxide (IWO) has been investigated as an oxide semiconductor candidate for next-generation thin-film transistors (TFTs). Bottom-gate TFTs we... » read more