Production Testing Of Discrete Power Products

By Vineet Pancholi - 20 Oct, 2022 - Comments: 0

By Vineet Pancholi and Dennis Dinawanao Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged modules are some of the more popular discrete products. Switches control the flow of current within a circuit. MOSFETs are a building block of most electronic... » read more

Functional-Engineered MXene Transistors

By Technical Paper Link - 28 Sep, 2022 - Comments: 0

A new technical paper titled "High-throughput design of functional-engineered MXene transistors with low-resistive contacts" was published by researchers at Indian Institute of Science (IISc) Bangalore. Abstract (partial): "Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, down... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML

By Technical Paper Link - 07 Sep, 2022 - Comments: 0

Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Designing and Simulating Low-Voltage CMOS Circuits Using Four-Parameter Model

By Technical Paper Link - 20 Jun, 2022 - Comments: 0

New technical paper titled "Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits" from researchers at Federal University of Santa Catarina, Brazil. Abstract "This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced com... » read more

Quantum Computers And CMOS Semiconductors: A Review And Future Predictions

By Michael Hargrove - 16 Jun, 2022 - Comments: 0

With the advent of quantum computing, the need for peripheral fault-tolerant logic control circuitry has reached new heights. In classical computation, the unit of information is a “1” or “0”. In quantum computers, the unit of information is a qubit which can be characterized as a “0”, “1”, or a superposition of both values (known as a “superimposed state”). The control c... » read more

GaN ICs Wanted for Power, EV Markets

By Katherine Derbyshire - 17 Mar, 2022 - Comments: 0

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

By Technical Paper Link - 04 Feb, 2022 - Comments: 0

Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

Safe And Reliable MOSFET Operation In Bidirectional Power Switch (BDPS) Applications

By Infineon - 05 Jan, 2022 - Comments: 0

The global market for battery-powered applications is rapidly growing, including power tools, service robots, light electric vehicles, and many others. The evolution of switched-mode power supply (SMPS) topologies enables designers to ensure safe charging and discharging of the equipment’s battery using bidirectional converters through the same terminal. However, to meet the safety requiremen... » read more

A Revolution For Power Conversion Systems — CoolSiC MOSFET

By Infineon - 09 Jun, 2021 - Comments: 0

Silicon carbide (SiC) transistors are increasingly used in power converters, placing high demands on the size, weight and/or efficiency. The outstanding material properties of SiC enable the design of fastswitching unipolar devices as opposed to bipolar IGBT devices. Thus, solutions which have been up to now possible in the low-voltage world only (< 600 V) are now possible at higher voltages... » read more

Manufacturing Bits: June 7

By Mark LaPedus - 07 Jun, 2021 - Comments: 0

High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

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