Atomic Layer Etching: Rethinking the Art of Etch

By Lam Research - 20 Sep, 2018 - Comments: 0

Atomic layer etching (ALE) is the most advanced etching technique in production today. In this Perspective, we describe ALE in comparison to long-standing conventional etching techniques, relating it to the underlying principles behind the ancient art of etching. Once considered too slow, we show how leveraging plasma has made ALE a thousand times faster than earlier approaches. While Si is the... » read more

Cryogenic Etch Re-Emerges

By Mark LaPedus - 20 Sep, 2018 - Comments: 0

After years in R&D, a technology called cryogenic etch is re-emerging as a possible option for production as the industry faces new challenges in memory and logic. Cryogenic etch removes materials in devices with high aspect ratios at cold temperatures, although it has always been a challenging process. Cryogenic etch is difficult to control and it requires specialized cryogenic gases in... » read more

Where Is Selective Deposition?

By Mark LaPedus - 25 Jun, 2018 - Comments: 4

For years, the industry has been working on an advanced technology called area-selective deposition for chip production at 5nm and beyond. Area-selective deposition, an advanced self-aligned patterning technique, is still in R&D amid a slew of challenges with the technology. But the more advanced forms of technology are beginning to make some progress, possibly inching closer from the la... » read more

How Atomic Layer Deposition Works

By Dennis Hausmann - 15 Mar, 2018 - Comments: 0

Imagine being able to deposit a film of material just a few atomic layers at a time. As impossible as that sounds, atomic layer deposition (ALD) is a reality. In fact, it’s being used in an ever-increasing number of applications as an extremely precise and controllable process for creating thin films. Together with its etch counterpart – atomic layer etching (ALE) – ALD is enabling the us... » read more

Variation Spreads At 10/7nm

By Ed Sperling - 16 Nov, 2017 - Comments: 6

Variation between different manufacturing equipment is becoming increasingly troublesome as chipmakers push to 10/7nm and beyond. Process variation is a well-known phenomenon at advanced nodes. But some of that is actually due to variations in equipment—sometimes the exact same model from the same vendor. Normally this would fall well below the radar of the semiconductor industry. But as t... » read more

A Look At Atomic Layer Deposition

By Lam Research - 18 May, 2017 - Comments: 0

Intel Inside The Package

By Ed Sperling - 08 May, 2017 - Comments: 1

Mark Bohr, senior fellow and director of process architecture and integration at Intel, sat down with Semiconductor Engineering to discuss the growing importance of multi-chip integration in a package, the growing emphasis on heterogeneity, and what to expect at 7nm and 5nm. What follows are excerpts of that interview. SE: There’s a move toward more heterogeneity in designs. Intel clearly ... » read more

Patterning Problems Pile Up

By Mark LaPedus - 20 Mar, 2017 - Comments: 4

Chipmakers are ramping up 16nm/14nm finFET processes, with 10nm and 7nm now moving into early production. But at 10nm and beyond, chipmakers are running into a new set of problems. While shrinking feature sizes of a device down to 10nm, 7nm, 5nm and perhaps beyond is possible using current and future fab equipment, there doesn't seem to be a simple way to solve the edge placement error (EPE)... » read more

Big Changes In Patterning

By Ed Sperling - 22 Feb, 2017 - Comments: 0

Aki Fujimura, CEO of [getentity id="22864" comment="D2S"], sat down with Semiconductor Engineering to discuss patterning issues at 10nm and below, including mask alignment, the need for GPU acceleration, EUV's future impact on the total number of masks, and what the re-introduction of curvilinear shapes will mean for design. SE: Patterning issues are getting a lot of attention at 10nm and 7n... » read more

Managing Parasitics For Transistor Performance

By Katherine Derbyshire - 30 Jan, 2017 - Comments: 3

The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for most of the IC industry's history, these have been sufficient. “Parasitic” or “external” resistances and capacitances from structures outside the transistor have been small enough to discoun... » read more

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Knowledge Centers
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eBook: Nearly everything you need to know about memory, including detailed explanations of the different types of memory; how and where these are used today; what's changing, which memories are successful and which ones might be in the future; and the limitations of each memory type.

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