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tag: CFET

Manufacturing Bits: Nov. 17
By Mark LaPedus - 17 Nov, 2020 - Comments: 0

Intel’s gate-all-around FETs At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel is expected to present papers on its efforts to develop gate-all-around transistors. One paper from Intel describes a more conventional gate-all-around transistor technology called a nanosheet FET. Another paper involves a next-generation NMOS-on-PMOS nanoribbon transistor technology. (F... » read more

Manufacturing Bits: July 14
By Mark LaPedus - 14 Jul, 2020 - Comments: 0

Complementary FETs At the recent 2020 Symposia on VLSI Technology and Circuits, Imec presented a paper on a 3D complementary field-effect transistor (CFET) made on 300mm wafers. As a demonstration vehicle, Imec showed a CFET based on a 14nm process. Ideally, though, CFETs are next-generation transistors that are targeted for the 1nm node in the future. On the transistor front, chipmaker... » read more

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates
By Coventor - 17 Jun, 2020 - Comments: 0

Sub-5 nm logic nodes will require an extremely high level of innovation to overcome the inherent real-estate limitations at this increased device density. One approach to increasing device density is to look at the vertical device dimension (z-direction), and stack devices on top of each other instead of conventionally side-by-side. The fabrication of a Complementary-Field Effect Transistor (CF... » read more

Introducing Nanosheets Into Complementary-Field Effect Transistors (CFETs)
By Benjamin Vincent - 01 Jun, 2020 - Comments: 0

In our November 2019 blog [1], we discussed using virtual fabrication (SEMulator3D) to benchmark different process integration options for Complementary-FET (CFET) fabrication. CFET is a CMOS architecture that was proposed by imec in 2018 [2]. This architecture contains p- and n-MOSFET structures built on top of each other, instead of having them located side-by-side. In our previous blog, we r... » read more

A Study Of Next-Generation CFET Process Integration Options
By Benjamin Vincent - 21 Nov, 2019 - Comments: 0

Decision making is a critical step in semiconductor technology development. R&D semiconductor engineers must consider different design and process options early in the development of a next-generation technology. Established techniques such as Failure Mode and Effect Analysis (FMEA) can be used to select among the most promising design and process choices. Once specific design and process m... » read more

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options
By Coventor - 21 Nov, 2019 - Comments: 0

Sub-5 nm logic nodes will require an extremely high level of innovation to overcome the inherent real-estate limitations at this increased device density. One approach to increasing device density is to look at the vertical device dimension (z-direction), and stack devices on top of each other instead of conventionally side-by-side. [1] The fabrication of a Complementary-Field Effect Transistor... » read more

Practical Methods To Overcome The Challenges Of 3D Logic Design
By Benjamin Vincent - 25 Jun, 2018 - Comments: 0

What should you do If you don’t have enough room on your floor to store all your old boxes? Luckily, we live in a 3D world, and you can start stacking them on top of each other. The Challenge: How can we shrink logic devices? Logic designers are currently facing even bigger challenges than you might be having in tidying up your storage area. Not only are logic cells highly packed together... » read more

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