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Novel E-Beam Techniques For Inspection And Monitoring


In this paper, we report an advanced e-beam defect inspection tool (eProbe®250) and the Design-for-Inspection™ (DFI) system that has been built and deployed by PDF Solutions down to 4nm FinFET technology nodes. This tool has a very high throughput which allows for in-line inspection of nanometer-level defects in the most advanced technology nodes. We also present eProbe applications for... » read more

Addressing The ABF Substrate Shortage With In-Line Monitoring


Ajinomoto build-up film (ABF) substrate has been a key component in chip manufacturing since its introduction shortly before the turn of the millennium. Substrates made with Ajinomoto build-up film – an electrical insulator designed for complex circuits – are found in PCs, routers, base stations, and servers. Looking ahead, the ABF substrate market will continue to grow, with revenue up ... » read more

Advanced High Throughput e-Beam Inspection With DirectScan


Optical inspection cannot resolve critical defects at advanced nodes and cannot detect subsurface defects. Especially at 7nm and below, many yield and reliability killer defects are the result of interactions between lithography, etch, and fill. These defects often will have part per billion (PPB) level fail rates. Conventional eBeam tools lack the throughput to measure PPB level fail rates. A ... » read more

Big Payback For Combining Different Types Of Fab Data


Collecting and combining diverse data types from different manufacturing processes can play a significant role in improving semiconductor yield, quality, and reliability, but making that happen requires integrating deep domain expertise from various different process steps and sifting through huge volumes of data scattered across a global supply chain. The semiconductor manufacturing IC data... » read more

Finding, Predicting EUV Stochastic Defects


Several vendors are rolling out next-generation inspection systems and software that locates problematic defects in chips caused by processes in extreme ultraviolet (EUV) lithography. Each defect detection technology involves various tradeoffs. But it’s imperative to use one or more of them in the fab. Ultimately, these so-called stochastic-induced defects caused by EUV can impact the perf... » read more

Defect Mitigation And Characterization In Silicon Hardmask Materials


From SPIE Digital Library: In this study, metal contaminants, liquid particle count and on-wafer defects of Si- HMs and filtration removal rates are monitored to determine the effect of filter type, pore size, media morphology, and cleanliness on filtration performance. 5-nm PTFE NTD2 filter having proprietary surface treatment used in this study shows lowest defect count. Authors: Vineet... » read more

The Most Expensive Defect


Defect inspection tools can be expensive. But regardless of the cost of the inspection tool needed to find a defect, the fab is almost always better off financially if it can find and fix that defect inline versus at the end of line (e.g., electrical test and failure analysis). Here, we are referring to the term defect in a general sense—the same concepts also apply to metrology measurement... » read more