Moore And More


For more than 50 years, the semiconductor industry has enjoyed the benefits of Moore's Law — or so it seemed. In reality, there were three laws rolled up into one: Each process generation would have a higher clock speed at the same power. This was not discovered by Moore, but by Dennard, who also invented the DRAM. Process generations continue to get faster and lower power, but the power... » read more

Software In Inference Accelerators


Geoff Tate, CEO of Flex Logix, talks about the importance of hardware-software co-design for inference accelerators, how that affects performance and power, and what new approaches chipmakers are taking to bring AI chips to market. » read more

Identifying DRAM Failures Caused By Leakage Current And Parasitic Capacitance


Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even when there are no obvious structural abnormalities in the underlying device. Leakage current has become a critically important component in DRAM device design. Fig. 1 (a) DRAM Memory Cell, (b) GI... » read more

Understanding the Interactions of Workloads and DRAM Types: A Comprehensive Experimental Study


Abstract "It has become increasingly difficult to understand the complex interaction between modern applications and main memory, composed of DRAM chips. Manufacturers are now selling and proposing many different types of DRAM, with each DRAM type catering to different needs (e.g., high throughput, low power, high memory density). At the same time, the memory access patterns of prevalent and... » read more

What’s Next For High Bandwidth Memory


A surge in data is driving the need for new IC package types with more and faster memory in high-end systems. But there are a multitude of challenges on the memory, packaging and other fronts. In systems, for example, data moves back and forth between the processor and DRAM, which is the main memory for most chips. But at times this exchange causes latency and power consumption, sometimes re... » read more

Manufacturing Bits: Dec. 16


Imec-Leti alliance At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Leti announced plans to collaborate in select areas. The two R&D organizations plan to collaborate in two areas—artificial intelligence (AI) and quantum computing. Imec and Leti have been separately working on AI technologies based on various next-generation memory architectures. Both entitie... » read more

MLPerf Benchmarks


Geoff Tate, CEO of Flex Logix, talks about the new MLPerf benchmark, what’s missing from the benchmark, and which ones are relevant to edge inferencing. » read more

DRAM Scaling Challenges Grow


DRAM makers are pushing into the next phase of scaling, but they are facing several challenges as the memory technology approaches its physical limit. DRAM is used for main memory in systems, and today’s most advanced devices are based on roughly 18nm to 15nm processes. The physical limit for DRAM is somewhere around 10nm. There are efforts in R&D to extend the technology, and ultimate... » read more

Why Standard Memory Choices Are So Confusing


System architects increasingly are developing custom memory architectures based upon specific use cases, adding to the complexity of the design process even though the basic memory building blocks have been around for more than half a century. The number of tradeoffs has skyrocketed along with the volume of data. Memory bandwidth is now a gating factor for applications, and traditional memor... » read more

GDDR6 Drilldown: Applications, Tradeoffs And Specs


Frank Ferro, senior director of product marketing for IP cores at Rambus, drills down on tradeoffs in choosing different DRAM versions, where GDDR6 fits into designs versus other types of DRAM, and how different memories are used in different vertical markets. » read more

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