ESD Co-Design For 224G And 112G SerDes In FinFET Technologies


In addressing the challenges of enhancing ESD resilience for high-speed SerDes interfaces, it's crucial to ensure the implementation of appropriate ESD protection measures. This is particularly vital during the device's lifecycle from the conclusion of silicon wafer processing to system assembly, a phase during which electronic devices are highly susceptible to Electrostatic Discharge (ESD) dam... » read more

ESD Co-Design For High-Speed SerDeS In FinFET Technologies


An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, including the phase from the completion of the silicon wafer processing to when the device (die) is assembled in the system. To avoid yield loss due to ESD damage during this early phase, on-chip ESD protection measures are applied to provide a certain degree of ESD robustness. The componen... » read more

Ensuring ESD Protection Verification With Industry-Standard Checks


Electronic design automation (EDA) verification of electrostatic discharge (ESD) protection is a complex task. Different integrated circuit (IC) design companies use different ESD protection approaches, different design flows, and different verification tools. To establish a consistent and comprehensive ESD EDA verification flow, the ESD Association (ESDA) provides recommended ESD compliance ch... » read more

Are You Paying Proper Attention To Your ESD Design Windows?


Electrostatic discharge (ESD) issues in integrated circuit (IC) chip designs have become more critical at advanced semiconductor process nodes, due to shrinking transistor dimensions and oxide layer thickness [1]. There are many ESD design rules and flows that designers check for common ESD issues, such as topological checks for the existence of ESD protection devices, current density (CD) chec... » read more

2.5/3D IC Reliability Verification Has Come A Long Way


2.5D/3D integrated circuits (ICs) have evolved into an innovative solution for many IC design and integration challenges. As shown in figure 1, 2.5D ICs have multiple dies placed side-by-side on a passive silicon interposer. The interposer is placed on a ball grid array (BGA) organic substrate. Micro-bumps attach each die to the interposer, and flip-chip (C4) bumps attach the interposer to the ... » read more

Enhance IC Reliability Design Verification With Coordinate-Based P2P And CD Checking


Coordinate-based P2P and CD checks with the Calibre PERC reliability platform enable quick early-stage design verification of ESD protection and other IC reliability issues. Using coordinate-based checking minimizes the amount of rule deck coding required, enabling design teams to start Calibre PERC P2P/CD verification very quickly, and understand and debug the results easily. Because P2P/CD ch... » read more

A New Multi-Stimuli-Based Simulation Method for ESD Design Verification


Abstract: "This paper analyzes TCAD ESD simulation for both HBM zapping using real-world HBM ESD waveforms as stimuli and TLP testing using square wave TLP pulse trains as stimuli. It concludes that TCAD ESD simulation using either HBM waveforms or TLP pulse trains, alone, is insufficient. We introduce a new mixed-mode simulation flow using combined HBM and TLP stimuli to achieve ESD design pr... » read more

Can We Efficiently Automate 2.5/3D IC ESD Protection Verification?


Protection against ESD events (commonly referred to as ESD robustness) is an extremely important aspect of integrated circuit (IC) design and verification, including 2.5/3D designs. ESD events cause severe damage to ICs due to a sudden and unexpected flow of electrical current between two electrically charged objects. This current may be caused by contact, an electrical short, or dielectric bre... » read more

How Robust Is Your ESD Protection? Are You Sure?


Electrostatic discharge (ESD) protection is critical at advanced nodes to safeguard designs against effects intensified by shrinking transistor dimensions and oxide layer thicknesses. On the other hand, ESD protection checks are consuming vastly more runtime and memory due to the growing die sizes of system-on-chips (SoCs) and the number of transistors they can hold. Designers are facing increa... » read more

Power Grid Analysis Heats Up At 20nm


By Ann Steffora Mutschler Do a simple Internet search for the term ‘power grid analysis’ and most of the results are academic sources. However, given the physics of either planar or finFET at 20nm and below, the power grid will see significant impacts. Overall, there are a number of technical implications of migrating from 28nm down to 20, 16 or 14 nm, with further impacts of moving fro... » read more

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