Big Changes In Architectures, Transistors, Materials


Chipmakers are gearing up for fundamental changes in architectures, materials, and basic structures like transistors and interconnects. The net result will be more process steps, increased complexity for each of those steps, and rising costs across the board. At the leading-edge, finFETs will run out of steam somewhere after the 3nm (30 angstrom) node. The three foundries still working at th... » read more

Equipment Suppliers Brace For GaN Market Explosion


A huge GaN market is opening up, driven by consumer devices and the need for greater energy efficiency across many applications. Suppliers are ready, but to fully compete with SiC in high-voltage automotive applications will require further technological developments in power GaN (gallium nitride). Still, the 2020s mark a very high-growth phase for GaN markets. Revenues in the power GaN mark... » read more

Nanosheet FETs Drive Changes In Metrology And Inspection


In the Moore’s Law world, it has become a truism that smaller nodes lead to larger problems. As fabs turn to nanosheet transistors, it is becoming increasingly challenging to detect line-edge roughness and other defects due to the depths and opacities of these and other multi-layered structures. As a result, metrology is taking even more of a hybrid approach, with some well-known tools moving... » read more

Technical Paper Round-up: August 8


New technical papers added to Semiconductor Engineering’s library this week. [table id=44 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Week In Review: Auto, Security, Pervasive Computing


Pervasive computing, connectivity Semtech Corporation announced that it will acquire Sierra Wireless, an IoT services company. The acquisition will combine Semtech’s LoRa end nodes and cloud service with Sierra Wireless’ cellular capabilities. Telit will incorporate Thales’s cellular IoT products business under a new name Telit Cinterion, led by Telit. Telit Cinterion will be Californ... » read more

Scaling, Advanced Packaging, Or Both


Chipmakers are facing a growing number of challenges and tradeoffs at the leading edge, where the cost of process shrinks is already exorbitant and rising. While it's theoretically possible to scale digital logic to 10 angstroms (1nm) and below, the likelihood of a planar SoC being developed at that nodes appears increasingly unlikely. This is hardly shocking in an industry that has heard pr... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET


New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

New Materials Open Door To New Devices


Integrating 2D materials into conventional semiconductor manufacturing processes may be one of the more radical changes in the chip industry’s history. While there is pain and suffering associated with the introduction of any new materials in semiconductor manufacturing, transition metal dichalcogenides (TMDs) support a variety of new device concepts, including BEOL transistors and single-... » read more

Insights From Industry Strategy Symposium Europe 2022


The timely return to an in-person Industry Strategy Symposium (ISS) Europe was welcomed by participants from around the globe on May 30th at the Brussels Sheraton. ISS Europe 2022 featured a new program and event format – with industry insights and strategic topics condensed into one day of programming on three critical challenges facing the microelectronics industry: the energy crisis and su... » read more

Week In Review, Manufacturing, Test


Samsung announced initial production of its 3nm process node, which uses a gate-all-around (nanosheet) transistor structure that the company calls Multi-Bridge-Channel FET (MBCFET). The first-generation 3nm process can reduce power consumption by up to 45% compared with a 5nm process, as well as improve performance by 23% and reduce area by 16%, according to the company. The second-generation 3... » read more

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