tag: imec

Quantum Effects At 7/5nm And Beyond
By Ed Sperling - 23 May, 2018 - Comments: 5

Quantum effects are becoming more pronounced at the most advanced nodes, causing unusual and sometimes unexpected changes in how electronic devices and signals behave. Quantum effects typically occur well behind the curtain for most of the chip industry, baked into a set of design rules developed from foundry data that most companies never see. This explains why foundries and manufacturing e... » read more

What’s Missing In EUV?
By Mark LaPedus - 17 May, 2018 - Comments: 0

Extreme ultraviolet (EUV) lithography is expected to move into production at 7nm and/or 5nm, but as previously reported, there are some gaps in the arena. At one time, the power source was the big problem, but that appears to be solved in the near term. Now, a phenomenon called stochastic effects, or random variations, are the biggest challenge for EUV lithography. But at most events, th... » read more

FinFET Metrology Challenges Grow
By Mark LaPedus - 17 May, 2018 - Comments: 1

Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

More Lithography/Mask Challenges (Part 3)
By Mark LaPedus - 16 May, 2018 - Comments: 1

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

Manufacturing Bits: May 8
By Mark LaPedus - 08 May, 2018 - Comments: 0

Electrolyte transistors Delft University of Technology, the Centre National de la Recherche Scientifique (CNRS) and NTT have developed a nanotransistor technology that will make it easier to measure the concentration of different electrolytes in the body. Electrolytes involve nutrients and chemicals in the body. They perform important functions and a disruption of the electrolyte balance is... » read more

Next EUV Issue: Mask 3D Effects
By Mark LaPedus - 25 Apr, 2018 - Comments: 6

As extreme ultraviolet (EUV) lithography moves closer to production, the industry is paying more attention to a problematic phenomenon called mask 3D effects. Mask 3D effects involve the photomask for EUV. In simple terms, a chipmaker designs an IC, which is translated from a file format into a photomask. The mask is a master template for a given IC design. It is placed in a lithography scan... » read more

New Patterning Options Emerging
By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

Searching For EUV Defects
By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Chipmakers hope to insert extreme ultraviolet (EUV) lithography at 7nm and/or 5nm, but several challenges need to be solved before this oft-delayed technology can be used in production. One lingering issue that is becoming more worrisome is how to find defects caused by [gettech id="31045" comment="EUV"] processes. These processes can cause random variations, also known as stochastic effects... » read more

More Lithography/Mask Challenges (Part 2)
By Mark LaPedus - 17 Apr, 2018 - Comments: 3

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

Manufacturing Bits: April 10
By Mark LaPedus - 10 Apr, 2018 - Comments: 1

Higher power GaN Imec and Qromis have announced the development of a new gallium nitride (GaN) substrate technology that enables power devices at 650 volts and above. GaN is an emerging technology for power semiconductor applications. Based on a GaN-on-silicon technology, GaN-based power semis operate at 650 volts and above. In simple terms, the buffer layers between the GaN device and the ... » read more

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