tag: LELE

New Method For BEOL Overlay And Process Margin Characterization
By PDF Solutions - 07 Jun, 2022 - Comments: 0

This paper presents a new method, design for inspection (DFI) to characterize overlay. Using design-assisted voltage contrast measurement, the method enables in-line test and monitoring of process induced OVL and CD variation of backend-of line (BEOL) features with litho-etch-lithoetch (LELE) patterning. While only some of the features of multi-color patterning scheme are chosen to be aligned d... » read more

Single Vs. Multi-Patterning EUV
By Mark LaPedus - 25 Mar, 2019 - Comments: 5

Extreme ultraviolet (EUV) lithography finally is moving into production, but foundry customers now must decide whether to implement their designs using EUV-based single patterning at 7nm, or whether to wait and instead deploy EUV multiple patterning at 5nm. Each patterning scheme has unique challenges, making that decision more difficult than it might appear. Targeted for 7nm, single pattern... » read more

Battling Fab Cycle Times
By Mark LaPedus - 16 Feb, 2017 - Comments: 9

The shift from planar devices to finFETs enables chipmakers to scale their processes and devices from 16nm/14nm and beyond, but the industry faces several challenges at each node. Cost and technical issues are the obvious challenges. In addition, cycle time—a key but less publicized part of the chip-scaling equation—also is increasing at every turn, creating more angst for chipmakers and... » read more

Why EUV Is So Difficult
By Mark LaPedus - 17 Nov, 2016 - Comments: 23

For years, extreme ultraviolet (EUV) lithography has been a promising technology that was supposed to help enable advanced chip scaling. But after years of R&D, EUV is still not in production despite major backing from the industry, vast resources and billions of dollars in funding. More recently, though, [gettech id="31045" comment="EUV"] lithography appears to be inching closer to pos... » read more

Deeper Inside Intel
By Mark LaPedus - 22 Aug, 2016 - Comments: 5

Mark Bohr, senior fellow and director of process architecture and integration at Intel, and Zane Ball, vice president in the Technology and Manufacturing Group at Intel and co-general manager of Intel Custom Foundry, sat down with Semiconductor Engineering to discuss the future directions of transistors, process technology, the foundry business and packaging. What follows are excerpts of those ... » read more

7nm Lithography Choices
By Mark LaPedus - 07 Mar, 2016 - Comments: 2

Chipmakers are ramping up their 16nm/14nm logic processes, with 10nm expected to move into early production later this year. Barring a major breakthrough in lithography, chipmakers are using today’s 193nm immersion and multiple patterning for both 16/14nm and 10nm. Now, chipmakers are focusing on the lithography options for 7nm. For this, they hope to use a combination of two technologies ... » read more

Double Patterning Custom Design And Debug
By Mentor, a Siemens Business - 22 Oct, 2015 - Comments: 0

Litho-Etch-Litho-Etch (LELE) double pattern (DP) processing affects many aspects of the design flow at/below the 20 nm node level. This can be very disruptive for the custom designer, impacting basic cell design strategy, layout rules and debug as well as parasitic extraction. This paper discusses how to deal with these impacts, avoid common design mistakes, and debug quickly and accurately. ... » read more

Litho Challenges Break The Design-Process Wall
By Katherine Derbyshire - 22 Jun, 2015 - Comments: 3

The days when chip designers could throw tape “over the wall” to the manufacturing side are long gone. Over the last several technology generations, increasingly restrictive process kits have forced designers to accommodate their circuit structures to the manufacturing process. Lacking a successor to 193nm lithography, the industry has turned to increasingly complex resolution enhancemen... » read more

The Bumpy Road To 10nm FinFETs
By Mark LaPedus - 21 May, 2015 - Comments: 0

Foundry vendors are currently ramping up their 16nm/14nm [getkc id="185" kc_name="finFET"] processes in the market. Vendors are battling each other for business in the arena, although the migration from planar to finFETs is expected to be a slow and expensive process. Still, despite the challenges at 16nm/14nm, vendors are gearing up for the next battle in the foundry business—the 10nm nod... » read more

Balancing On The Color Density Tightrope
By David Abercrombie - 19 Feb, 2015 - Comments: 0

Balancing on wobbly tightropes is something that chip designers get pretty good at. For instance, there is a fine balance between optimizing performance and minimizing leakage in a design layout. Dealing with the new requirements that multi-patterning (MP) introduces into a design flow creates many new tightropes to walk. I tiptoed out on one of the rarely talked about ones in my last article�... » read more

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