Measuring 3D Sidewall Topography & LER for Photoresist Patterns Using Tip-Tilting AFM Technology


A new technical paper titled "Enhancing the precision of 3D sidewall measurements of photoresist using atomic force microscopy with a tip-tilting technique" by researchers at National Metrology Institute of Japan (NMIJ) and National Institute of Advanced Industrial Science and Technology (AIST). "We have developed a technique for measuring the sidewall of the resist pattern using atomic for... » read more

Devices And Transistors For The Next 75 Years


The 75th anniversary of the invention of the transistor sparked a lively panel discussion at IEDM, spurring debate about the future of CMOS, the role of III-V and 2D materials in future transistors, and what will be the next great memory architecture.[1] Industry veterans from the memory, logic, and research communities see high-NA EUV production, NAND flash with 1,000 layers, and hybrid bon... » read more

Mapping The Future Of Lithography


The SPIE Advanced Lithography + Patterning (AL+P) Symposium is always an informative event for lithographers, and looking at the Advance Program, it appears that AL+P 2023 will be no exception. The progress being made on key lithographic challenges is consistently of interest to attendees, and there will be many timely presentations that address issues of current significance. For example, r... » read more

Increased Photomask Density And Its Impact On EDA


The ability to print curvilinear shapes on photomasks can have big repercussions on semiconductor design. Aki Fujimura, CEO of D2S, explains why mask rule checking has been bound by complex design rules, and why curvilinear shapes are important for reducing margin and simplifying the chip design process. » read more

Lithography Modeling: Data Augmentation Framework


A new technical paper titled "An Adversarial Active Sampling-based Data Augmentation Framework for Manufacturable Chip Design" was published by researchers at the University of Texas at Austin, Nvidia, and the California Institute of Technology. Abstract: "Lithography modeling is a crucial problem in chip design to ensure a chip design mask is manufacturable. It requires rigorous simulation... » read more

Week In Review: Semiconductor Manufacturing, Test


Fallout from the new U.S. export controls continues. Under new regulations, companies looking to supply Chinese chipmakers with advanced manufacturing equipment (<14nm) must first obtain a license from the U.S. Department of Commerce. In addition, U.S. persons (citizens and permanent residents) are barred from supporting China’s advanced chip development or production without a license. ... » read more

Thermal Scanning Probe Lithography


A new technical paper titled "Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography" was published by researchers at École Polytechnique Fédérale de Lausanne (EPFL). "Thermal scanning probe lithography (t-SPL) is a gentle alternative to the typically used electron beam lithography to fabricate these devices avoiding the use of electrons, which are well known to... » read more

Analysis Of Pattern Distortion By Panel Deformation And Addressing It By Using Extremely Large Exposure Field Fine-Resolution Lithography


The growing demand for heterogeneous integration is driven by the 5G market. This includes smartphones, data centers, servers, high-performance computing (HPC), artificial intelligence (AI) and internet of things (IoT) applications. Next-generation packaging technologies require tighter overlay to accommodate larger package sizes with fine-pitch chip interconnects on large-format flexible panel... » read more

How To Compare Chips


Traditional metrics for semiconductors are becoming much less meaningful in the most advanced designs. The number of transistors packed into a square centimeter only matters if they can be utilized, and performance per watt is irrelevant if sufficient power cannot be delivered to all of the transistors. The consensus across the chip industry is that the cost per transistor is rising at each ... » read more

The High Price Of Smaller Features


The semiconductor industry’s push for higher numerical apertures is driven by the relationship between NA and critical dimension. As the NA goes up, the CD goes down: Where λ is the wavelength and k1 is a process coefficient. While 0.55 NA exposure systems will improve resolution, Larry Melvin, principal engineer at Synopsys, noted that smaller features always come with a process cos... » read more

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