Self-Aligned Double Patterning—Part Deux

By David Abercrombie - 14 Aug, 2014 - Comments: 0

In my last article, I introduced you to the basic Self-Aligned Double-Patterning (SADP) process that is one of the potential candidate techniques for processing metal layers at 10nm and below, but let’s have a quick recap. SADP uses a deposition and etch step process to create spacers surrounding a patterned shape (Figure 1). As you can see, there are two masking steps—the first mask is cal... » read more

Multi-beam Sees The Light

By Mark LaPedus - 19 Jun, 2014 - Comments: 2

The multiple-beam electron-beam market is going in two separate directions at once. Multi-beam for photomask writing is set to take off. The other market--multi-beam for direct-write lithography applications—is still in the early stages and remains in flux. In the multi-beam direct-write segment, for example, multiple sources indicate that KLA-Tencor is exiting this market to focus on its ... » read more

Stopping Mask Hotspots Before They Escape The Mask Shop

By eBeam Initiative - 28 Apr, 2014 - Comments: 3

By Aki Fujimura The same types of physics-based issues that have haunted lithography for decades have started to impact mask writing as well. The increasingly small and complex mask shapes specified by optical proximity correction (OPC) that are now required for faithful wafer lithography at 28nm-and-below nodes have given rise to an increase in mask hotspots. Mask hotspots occur when the shap... » read more

Blog Review: April 23

By Ed Sperling - 23 Apr, 2014 - Comments: 0

Mentor’s John Day looks backward through a smart rearview mirror from Nissan. No glare, even at night or at sunset, and a wider field of vision. You have to wonder why this technology took so long. Synopsys’ Karen Bartleson wonders when the IoT will actually arrive, given the delay in durable goods, a concern over security and the effects of government regulation. Answer: When we stop ta... » read more

Mask Hotspots Are Escaping The Mask Shop

By Various Writers - 16 Apr, 2014 - Comments: 0

Although the overwhelming majority of wafer production issues at the 28nm-and- below process nodes are lithography- and OPC-related, the semiconductor industry is starting to see problems caused by mask hotspots: wafer-level production issues that are caused when the shapes specified by optical proximity correction (OPC) are not faithfully reproduced on the mask. Mask hotspots will account for ... » read more

One-on-One: Naoya Hayashi

By Mark LaPedus - 20 Mar, 2014 - Comments: 0

Semiconductor Engineering sat down to discuss the current and future challenges in the photomask industry with Naoya Hayashi, research fellow at Dai Nippon Printing (DNP). SE: What are the big challenges for the photomask industry today? Hayashi: There are several challenges. Most of the challenges involve mask complexity. It is also quite difficult to handle the mask data, because it is ... » read more

Next-Generation Lithography

By Ed Sperling - 04 Mar, 2014 - Comments: 0

Aki Fujimura, CEO of D2S, sat down with Semiconductor Engineering to talk about the challenges of moving to the next process nodes and how that will affect everything from lithography to the write time, size and cost of photomasks. [youtube vid=L96vi-BjhDU] » read more

Tech Talk: Multipatterning

By Brian Bailey - 03 Mar, 2014 - Comments: 2

Mentor Graphics' David Abercrombie shows how multi patterning is supposed to be done, and what sorts of problems can crop up along the way. Now that EUV has hit another hiccup, the semiconductor industry has little choice. [youtube vid=tOs_OMSh4Nk] » read more

Interconnect Challenges Grow

By Mark LaPedus - 20 Feb, 2014 - Comments: 0

Qualcomm outlined the technology challenges facing mobile chip suppliers at a recent event. In no particular order, the challenges include the usual suspects—area scaling, power reduction, performance and cost. Another concern for Qualcomm is an often-overlooked part of the equation—the backend-of-the-line (BEOL). In chip production, the BEOL is where the interconnects are formed within ... » read more

The Trouble With Triples—Part 2

By David Abercrombie - 23 Jan, 2014 - Comments: 1

In my last blog, we started to look at some of the challenges of triple patterning (TP) compared to double patterning (DP). In particular, we looked at the algorithmic complexity of determining if a valid coloring solution exists, and if so, producing a three-mask decomposition. This time, let’s look into the challenges of what to do if a layout is not legally decomposable into three colors. ... » read more

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