2.5D Creeps Into SoC Designs


A decade ago top chipmakers predicted that the next frontier for SoC architectures would be the z axis, adding a third dimension to improve throughput and performance, reduce congestion around memories, and reduce the amount of energy needed to drive signals. The obvious market for this was applications processors for mobile devices, and the first companies to jump on the stacked die bandwag... » read more

Multiple Lithography Options Still Remain in Play


The throughput and uptime of EUV, and the overlay accuracy of 193nm immersion lithography, continue to steadily improve, though neither is yet ready for 10nm production, according to speakers at SEMICON West. Mike Lercel, ASML director, Product Marketing, reported several EUV tool sites achieved 70 percent uptime for more than a week, and one customer site had done so for more than four ... » read more

10nm Fab Challenges


After a promising start in 2015, the semiconductor equipment industry is currently experiencing a slight lull. The pause is expected to be short-lived, however. Suppliers of [getkc id="208" comment="3D NAND"] devices are expected to add more fab capacity later this year. And about the same time, foundries are expected to order the first wave of high-volume production tools for 10nm. At 10nm... » read more

Next EUV Challenge: Mask Inspection


Extreme ultraviolet ([gettech id="31045" comment="EUV"]) lithography is still not ready for prime time, but the technology finally is moving in the right direction. The EUV light source, for example, is making progress after years of delays and setbacks. Now, amid a possible breakthrough in EUV, the industry is revisiting a nagging issue and asking a simple question: How do you inspect EUV p... » read more

3D Effects At 20nm And Beyond


At the 20nm process node and below, attenuated phase shift masks (PSM) are used in the photolithography process, which results in approximately 70nm of topography. This now must be accounted for using 3D mask approximation. Aki Fujimura, CEO of [getentity id="22864" comment="D2S"], explained that in terms of [getkc id="80" comment="lithography"], where simulation-based technologies are used,... » read more

Tech Talk: Moore’s Law


Aki Fujimara, CEO of D2S, talks with Semiconductor Engineering about the the technical challenges of scaling device and functionality, and the economics on cost per gate. [youtube vid=hBXtSCRbR64] » read more

5 Disruptive Mask Technologies


Photomask complexity and costs are increasing at each node, thereby creating a number of challenges on several fronts. On one front, for example, traditional single-beam e-beam tools are struggling to keep up with mask complexity. As a result, the write times and costs continue to rise. Mask complexity also impacts the other parts of the tool flow, such as inspection, metrology and repair. I... » read more

Demonstrating The Benefits Of Source-Mask Optimization And Enabling Technologies Through Experiment And Simulations


In recent years the potential of Source-Mask Optimization (SMO) as an enabling technology for 22nm-and-beyond lithography has been explored and documented in the literature. It has been shown that intensive optimization of the fundamental degrees of freedom in the optical system allows for the creation of non-intuitive solutions in both the mask and the source, which leads to improved lithograp... » read more

Tech Talk: Photomask Challenges


GlobalFoundries' Bob Pack talks with Semiconductor Engineering about new problems experienced by photomask shops and how does lithography affects it all. [youtube vid=8hJwVhaZhFc] » read more

Design Rules Explode At New Nodes


Semiconductor Engineering sat down changing design rules with Sergey Shumarayev, senior director of custom IP design at Altera; Luigi Capodieci, R&D fellow at [getentity id="22819" comment="GlobalFoundries"]; Michael White, director of product marketing for Calibre Physical Verification at [getentity id="22017" e_name="Mentor Graphics"], and Coby Zelnik, CEO of [getentity id="22478" e_name=... » read more

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