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Power/Performance Bits: Nov. 24


Flexible, low power phase-change memory Engineers at Stanford University created a flexible phase-change memory. The non-volatile phase-change memory device is made up of germanium, antimony, and tellurium (GST) between two metal electrodes. 1s and 0s represent measurements of electrical resistance in the GST material. “A typical phase-change memory device can store two states of resis... » read more