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Research Bits: Nov. 21


Graphene heater for phase-change switches Researchers from the University of Washington, Stanford University, Charles Stark Draper Laboratory, University of Maryland, and Massachusetts Institute of Technology designed an energy-efficient, silicon-based non-volatile switch that manipulates light through the use of a phase-change material and graphene heater. Aiming to reduce the power consum... » read more

Chip Industry’s Technical Paper Roundup: Nov. 1


New technical papers added to Semiconductor Engineering’s library this week. [table id=61 /] » read more

In-NAND Flash Processing Technique for Improved Performance, Energy Efficiency & Reliability of Bulk Bitwise Operations


A new technical paper titled "Flash-Cosmos: In-Flash Bulk Bitwise Operations Using Inherent Computation Capability of NAND Flash Memory" was published by researchers at ETH Zurich, POSTECH, LIRMM/Univ. Montpellier/CNRS and Kyungpook National University. Find the technical paper here (published September 2022) and related YouTube lecture here. "We propose Flash-Cosmos (Flash Computation wi... » read more

Week In Review: Manufacturing, Test


On Sunday, a 6.8-magnitude earthquake struck the southeast region of Taiwan, causing devastation. TSMC officials reported “no known significant impact for now.” Market research firm TrendForce arrived at a similar conclusion based on its analysis of individual fabs. The Biden administration announced appointment of the leadership team charged with implementing the US CHIPS and Science Ac... » read more

Research Bits: March 7


Optical signal processing with acoustic waves Researchers from Pohang University of Science & Technology (POSTECH) demonstrated an optical-wave signal that can be amplified or canceled using optically driven acoustic waves on a silicon chip. Optical signal processing using Brillouin scattering, in which acoustic waves scatter light, has been demonstrated in nanophotonic structures. But ... » read more

Power/Performance Bits: Nov. 24


Flexible, low power phase-change memory Engineers at Stanford University created a flexible phase-change memory. The non-volatile phase-change memory device is made up of germanium, antimony, and tellurium (GST) between two metal electrodes. 1s and 0s represent measurements of electrical resistance in the GST material. “A typical phase-change memory device can store two states of resis... » read more