Ferroelectric Memories Answer Call For Non-Volatile Alternatives

By Katherine Derbyshire - 21 Sep, 2023 - Comments: 0

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and the stability of flash memory. Changing the polarization of ferroelectric domains is extremely fast, and the polarization remains stable without power for years, if not decades. FeFETs, one of ... » read more

Technical Paper Roundup: Sept 11

By Liz Allan - 11 Sep, 2023 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=136 /] (more…) » read more

A Microfluidics Device That Can Perform ANN Computation On Data Stored In DNA

By Technical Paper Link - 06 Sep, 2023 - Comments: 0

A technical paper titled “Neural network execution using nicked DNA and microfluidics” was published by researchers at University of Minnesota Twin-Cities and Rochester Institute of Technology. Abstract: "DNA has been discussed as a potential medium for data storage. Potentially it could be denser, could consume less energy, and could be more durable than conventional storage media such a... » read more

Chip Industry’s Technical Paper Roundup: June 13

By Liz Allan - 13 Jun, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=109 /] Further Reading Technical Paper Home » read more

A PIM Architecture That Supports Floating Point-Precision Computations Within The Memory Chip

By Technical Paper Link - 07 Jun, 2023 - Comments: 0

A technical paper titled “FlutPIM: A Look-up Table-based Processing in Memory Architecture with Floating-point Computation Support for Deep Learning Applications” was published by researchers at Rochester Institute of Technology and George Mason University. Abstract: "Processing-in-Memory (PIM) has shown great potential for a wide range of data-driven applications, especially Deep Learnin... » read more

Ferroelectric Memories: The Middle Ground

By Katherine Derbyshire - 19 Jan, 2023 - Comments: 0

The first article in this series considered the use of ferroelectrics to improve subthreshold swing behavior in logic transistors. The prospects for ferroelectrics in logic applications are uncertain, but ferroelectric memories have clear advantages. The two most common commercial memories lie at opposite ends of a spectrum. DRAM is fast, but requires constant power to maintain its informat... » read more

EDA Embraces Big Data Amid Talent Crunch

By Marie C. Baca - 23 Jun, 2022 - Comments: 0

The semiconductor industry’s labor crunch finally has convinced chip designers to bet big money on big data. As recently as 2016, executives weren’t sure there was a market for big data approaches to electronic design automation. The following year, utilization of big data remained stuck in its infancy. And in 2018, Semiconductor Engineering questioned why the EDA sector wasn’t investi... » read more

Technical Paper Round-up: May 3

By Linda Christensen - 03 May, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=24 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Hardware Encryption: Ultra-compact Active Interconnect Based on FeFET

By Technical Paper Link - 02 May, 2022 - Comments: 0

New technical paper "Hardware functional obfuscation with ferroelectric active interconnects" from researchers at Penn State, Rochester Institute of Technology, GlobalFoundries Fab1, North Dakota State University. Abstract "Existing circuit camouflaging techniques to prevent reverse engineering increase circuit-complexity with significant area, energy, and delay penalty. In this paper, we... » read more

FeFETs Bring Promise And Challenges

By Bryon Moyer - 17 Feb, 2021 - Comments: 3

Ferroelectric FETs (FeFETs) and memory (FeRAM) are generating high levels of interest in the research community. Based on a physical mechanism that hasn’t yet been commercially exploited, they join the other interesting new physics ideas that are in various stages of commercialization. “FeRAM is very promising, but it's like all promising memory technologies — it takes a while to get b... » read more

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Knowledge Centers
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