Extending Copper Interconnects To 2nm

By Laura Peters - 17 Mar, 2022 - Comments: 0

Transistor scaling is reaching a tipping point at 3nm, where nanosheet FETs will likely replace finFETs to meet performance, power, area, and cost (PPAC) goals. A significant architectural change is similarly being evaluated for copper interconnects at 2nm, a move that would reconfigure the way power is delivered to transistors. This approach relies on so-called buried power rails (BPRs) and... » read more

Photomask Challenges At 3nm And Beyond

By Mark LaPedus - 25 Jan, 2022 - Comments: 1

Experts at the Table: Semiconductor Engineering sat down to discuss optical and EUV photomasks issues, as well as the challenges facing the mask business, with Naoya Hayashi, research fellow at DNP; Peter Buck, director of MPC & mask defect management at Siemens Digital Industries Software; Bryan Kasprowicz, senior director of technical strategy at Hoya; and Aki Fujimura, CEO of D2S. What f... » read more

What’s Next For Transistors And Chiplets

By Mark LaPedus - 21 Oct, 2021 - Comments: 5

Sri Samavedam, senior vice president of CMOS Technologies at Imec, sat down with Semiconductor Engineering to talk about finFET scaling, gate-all-around transistors, interconnects, packaging, chiplets and 3D SoCs. What follows are excerpts of that discussion. SE: The semiconductor technology roadmap is moving in several different directions. We have traditional logic scaling, but packaging i... » read more

EUV Pellicles Finally Ready

By Mark LaPedus - 22 Mar, 2021 - Comments: 0

After a period of delays, EUV pellicles are emerging and becoming a requirement in high-volume production of critical chips. At the same time, the pellicle landscape for extreme ultraviolet (EUV) lithography is changing. ASML, the sole supplier of EUV pellicles, is transferring the assembly and distribution of these products to Mitsui. Others are also developing pellicles for EUV, a next-gen... » read more

Breaking The 2nm Barrier

By Mark LaPedus - 18 Feb, 2021 - Comments: 4

Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

Big Changes In Tiny Interconnects

By Ed Sperling - 16 Apr, 2020 - Comments: 1

One of the fundamental components of a semiconductor, the interconnect, is undergoing radical changes as chips scale below 7nm. Some of the most pronounced shifts are occurring at the lowest metal layers. As more and smaller transistors are packed onto a die, and as more data is processed and moved both on and off a chip or across a package, the materials used to make those interconnects, th... » read more

Finding Defects In EUV Masks

By Mark LaPedus - 23 Jan, 2020 - Comments: 0

Extreme ultraviolet (EUV) lithography is finally in production at advanced nodes, but there are still several challenges with the technology, such as EUV mask defects. Defects are unwanted deviations in chips, which can impact yield and performance. They can crop up during the chip manufacturing process, including the production of a mask or photomask, sometimes called a reticle. Fortunately... » read more

Multi-Patterning EUV Vs. High-NA EUV

By Mark LaPedus - 04 Dec, 2019 - Comments: 4

Foundries are finally in production with EUV lithography at 7nm, but chip customers must now decide whether to implement their next designs using EUV-based multiple patterning at 5nm/3nm or wait for a new single-patterning EUV system at 3nm and beyond. This scenario revolves around ASML’s current extreme ultraviolet (EUV) lithography tool (NXE:3400C) versus a completely new EUV system with... » read more

Dealing With Resistance In Chips

By Mark LaPedus - 21 Jun, 2018 - Comments: 2

Chipmakers continue to scale the transistor at advanced nodes, but they are struggling to maintain the same pace with the other two critical parts of the device—the contacts and interconnects. That’s beginning to change, however. In fact, at 10nm/7nm, chipmakers are introducing new topologies and materials such as cobalt, which promises to boost the performance and reduce unwanted resist... » read more

Big Trouble At 3nm

By Mark LaPedus - 21 Jun, 2018 - Comments: 0

As chipmakers begin to ramp up 10nm/7nm technologies in the market, vendors are also gearing up for the development of a next-generation transistor type at 3nm. Some have announced specific plans at 3nm, but the transition to this node is expected to be a long and bumpy one, filled with a slew of technical and cost challenges. For example, the design cost for a 3nm chip could exceed an eye-p... » read more

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Knowledge Centers
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