Large-Scale Nanometer-Thick Graphite Film (NGF) As A EUV Pellicle


A new technical paper titled "Graphite Pellicle: Physical Shield for Next-Generation EUV Lithography Technology" was published by researchers at University of Ottawa, Sungkyunkwan University, and Hanbat National University. Abstract "Extreme ultraviolet lithography (EUVL) is widely employed in the electronics, automotive, military, and AI computing areas for IC chip fabrication. A pellicl... » read more

Research Bits: March 6


2D TMDs on silicon Engineers at MIT, University of Texas at Dallas, Institute for Basic Science, Sungkyunkwan University, Washington University in St. Louis, University of California at Riverside, ISAC Research, and Yonsei University found a way to grow 2D materials on industry-standard silicon wafers while preserving their crystalline form. Using a new “nonepitaxial, single-crystalline g... » read more

Technical Paper Roundup: Sept 6


New technical papers added to Semiconductor Engineering’s library this week. [table id=49 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit f... » read more

Artificial Neural Network (ANN)-Based Model To Evaluate The Characteristics of A Nanosheet FET (NSFET)


This new technical paper titled "Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors" was published by researchers at SungKyunKwan University, Korea. Abstract: "In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generat... » read more

Technical Paper Roundup: Aug. 30


New technical papers added to Semiconductor Engineering’s library this week. [table id=47 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

3D NAND: Scenarios For Scaling & Stacking


A new research paper titled "Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages" was published by researchers at Sungkyunkwan University and Korea University. Abstract "Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some pote... » read more

Technical Paper Round-Up: April 19


New technical papers include selective etching, ISO 26262 test bench, hardware accelerators, RISC-V, lidar, EUV mask inspection, fault attacks, edge computing, gallium oxide, and machine learning for VLSI CAD-on-chip power grid design. Cutting-edge research is now a global effort. It extends from the U.S. Air Force, to schools such as MIT, and universities in Italy, Spain, Portugal, India, K... » read more

Selective etching of silicon nitride over silicon oxide using ClF3 /H2 remote plasma


Researchers from Sungkyunkwan University, MIT and others present an option for selective etching. Abstract "Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic etching of SiNx over SiOy has been investiga... » read more

Technical Paper Round-Up: March 29


Improving batteries, ultra low-power photonic edge computing, SLAM, Tellurium for 2D semiconductors, and reservoir computing top the past week's technical papers. The focus on energy is critical as the edge buildout continues and more devices are connected to a battery, while research into new architectures and materials that will continue scaling and improve performance per watt continue at th... » read more

Flat-surface-assisted and self-regulated oxidation resistance of Cu(111)


Abstract "Oxidation can deteriorate the properties of copper that are critical for its use, particularly in the semiconductor industry and electro-optics applications. This has prompted numerous studies exploring copper oxidation and possible passivation strategies. In situ observations have, for example, shown that oxidation involves stepped surfaces: Cu2O growth occurs on flat surfaces as a ... » read more

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